BSS138N E7854

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-30 Code :

R-PDSO-G3

Gate Charge (Qg) (Max) @ Vgs :

1.4nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

230mA Ta

Number of Terminations :

3

Package / Case :

TO-236-3, SC-59, SOT-23-3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Series :

SIPMOS®

Terminal Form :

Gull wing

Drain Current-Max (Abs) (ID) :

0.23A

Transistor Element Material :

SILICON

RoHS Status :

RoHS Compliant

Operating Temperature :

-55°C~150°C TJ

Reach Compliance Code :

Compliant

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

3.5 Ω @ 230mA, 10V

Terminal Position :

Dual

Surface Mount :

yes

Feedback Cap-Max (Crss) :

3.8 pF

Published :

2012

Vgs (Max) :

±20V

Packaging :

Tape and Reel (TR)

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

DS Breakdown Voltage-Min :

60V

Drain to Source Voltage (Vdss) :

60V

Vgs(th) (Max) @ Id :

1.4V @ 250μA

Configuration :

SINGLE WITH BUILT-IN DIODE

Additional Feature :

LOGIC LEVEL COMPATIBLE

Mounting Type :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

41pF @ 25V

Power Dissipation-Max :

360mW Ta