BSS138N-E6327

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

Package / Case :

TO-236-3, SC-59, SOT-23-3

Transistor Element Material :

SILICON

Vgs (Max) :

±20V

Current - Continuous Drain (Id) @ 25°C :

230mA Ta

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

3.5 Ω @ 230mA, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

360mW Ta

JESD-609 Code :

e3

Feedback Cap-Max (Crss) :

3.8 pF

Published :

2007

JESD-30 Code :

R-PDSO-G3

Terminal Form :

Gull wing

Gate Charge (Qg) (Max) @ Vgs :

1.4nC @ 10V

Terminal Finish :

Matte Tin (Sn)

Peak Reflow Temperature (Cel) :

260

Drain Current-Max (Abs) (ID) :

0.23A

Surface Mount :

yes

Time@Peak Reflow Temperature-Max (s) :

40

Qualification Status :

Not Qualified

Vgs(th) (Max) @ Id :

1.4V @ 250μA

HTS Code :

8541.21.00.95

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Series :

SIPMOS®

Additional Feature :

LOGIC LEVEL COMPATIBLE

Mounting Type :

Surface Mount

Terminal Position :

Dual

Reach Compliance Code :

Compliant

Operating Temperature :

-55°C~150°C TJ

ECCN Code :

EAR99

Drain to Source Voltage (Vdss) :

60V

RoHS Status :

RoHS Compliant

Number of Terminations :

3

Input Capacitance (Ciss) (Max) @ Vds :

41pF @ 25V

Number of Elements :

1

Configuration :

SINGLE WITH BUILT-IN DIODE

Pin Count :

3

DS Breakdown Voltage-Min :

60V

Packaging :

Tape and Reel (TR)