BSS138LT3
- Mfr.Part #
- BSS138LT3
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- MOSFET N-CH 50V 200MA SOT23-3
- Stock
- 1,076,754
- In Stock :
- 1,076,754
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Surface Mount :
- yes
- Vgs(th) (Max) @ Id :
- 1.5V @ 1mA
- Current Rating :
- 200mA
- Continuous Drain Current (ID) :
- 200mA
- Transistor Element Material :
- SILICON
- Operating Mode :
- ENHANCEMENT MODE
- Vgs (Max) :
- ±20V
- Drain to Source Breakdown Voltage :
- 50V
- Reach Compliance Code :
- not_compliant
- Qualification Status :
- Not Qualified
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Mounting Type :
- Surface Mount
- Feedback Cap-Max (Crss) :
- 5 pF
- Drain Current-Max (Abs) (ID) :
- 0.2A
- Peak Reflow Temperature (Cel) :
- 240
- Input Capacitance (Ciss) (Max) @ Vds :
- 50pF @ 25V
- Pin Count :
- 3
- Turn-Off Delay Time :
- 20 ns
- Number of Elements :
- 1
- Number of Terminations :
- 3
- RoHS Status :
- Non-RoHS Compliant
- Gate to Source Voltage (Vgs) :
- 20V
- Current - Continuous Drain (Id) @ 25°C :
- 200mA Ta
- ECCN Code :
- EAR99
- Terminal Finish :
- Tin/Lead (Sn80Pb20)
- Power Dissipation-Max :
- 225mW Ta
- Operating Temperature :
- -55°C~150°C TJ
- Element Configuration :
- Single
- HTS Code :
- 8541.21.00.95
- Pbfree Code :
- No
- Terminal Form :
- Gull wing
- Packaging :
- Tape and Reel (TR)
- Number of Pins :
- 3
- Rds On (Max) @ Id, Vgs :
- 3.5 Ω @ 200mA, 5V
- Terminal Position :
- Dual
- JESD-609 Code :
- e0
- Voltage - Rated DC :
- 50V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lead Free :
- Contains Lead
- FET Type :
- N-Channel
- Power Dissipation :
- 225mW
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V
- Transistor Application :
- SWITCHING
- Published :
- 2009
- Datasheets
- BSS138LT3

N-Channel Tape & Reel (TR) 3.5 Ω @ 200mA, 5V ±20V 50pF @ 25V TO-236-3, SC-59, SOT-23-3
BSS138LT3 Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 50pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 200mA continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 50V, and this device has a drainage-to-source breakdown voltage of 50VV.Drain current refers to the maximum continuous current a device can conduct, and it is 0.2A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 20 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.Using drive voltage (5V), this device contributes to a reduction in overall power consumption.
BSS138LT3 Features
a continuous drain current (ID) of 200mA
a drain-to-source breakdown voltage of 50V voltage
the turn-off delay time is 20 ns
BSS138LT3 Applications
There are a lot of ON Semiconductor
BSS138LT3 applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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