BSS126L6327HTSA1

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Mfr.Part #
BSS126L6327HTSA1
Manufacturer
Infineon Technologies
Package / Case
TO-236-3, SC-59, SOT-23-3
Datasheet
Download
Description
MOSFET N-CH 600V 21MA SOT23-3
Stock
25,888
In Stock :
25,888

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
Mount :
Surface Mount
Drive Voltage (Max Rds On,Min Rds On) :
0V 10V
Power Dissipation :
500mW
Operating Temperature :
-55°C~150°C TJ
Gate to Source Voltage (Vgs) :
20V
FET Type :
N-Channel
Max Operating Temperature :
150°C
Min Operating Temperature :
-55°C
Packaging :
Tape and Reel (TR)
Published :
2007
FET Feature :
Depletion Mode
RoHS Status :
RoHS Compliant
Supplier Device Package :
SOT-23-3
Series :
SIPMOS®
Mounting Type :
Surface Mount
Number of Pins :
3
Gate Charge (Qg) (Max) @ Vgs :
2.1nC @ 5V
Rds On (Max) @ Id, Vgs :
500Ohm @ 16mA, 10V
Vgs (Max) :
±20V
Number of Elements :
1
Current - Continuous Drain (Id) @ 25°C :
21mA Ta
Input Capacitance (Ciss) (Max) @ Vds :
28pF @ 25V
Rds On Max :
500 Ω
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Drain to Source Voltage (Vdss) :
600V
Power Dissipation-Max :
500mW Ta
Input Capacitance :
28pF
Vgs(th) (Max) @ Id :
1.6V @ 8μA
Continuous Drain Current (ID) :
21mA
Package / Case :
TO-236-3, SC-59, SOT-23-3
Datasheets
BSS126L6327HTSA1
Introducing Transistors - FETs, MOSFETs - Single Infineon Technologies BSS126L6327HTSA1 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Mounting Type:Surface Mount, Number of Pins:3, Package / Case:TO-236-3, SC-59, SOT-23-3, BSS126L6327HTSA1 pinout, BSS126L6327HTSA1 datasheet PDF, BSS126L6327HTSA1 amp .Beyond Transistors - FETs, MOSFETs - Single Infineon Technologies BSS126L6327HTSA1 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies BSS126L6327HTSA1


N-Channel Tape & Reel (TR) 500Ohm @ 16mA, 10V ±20V 28pF @ 25V 2.1nC @ 5V 600V TO-236-3, SC-59, SOT-23-3

BSS126L6327HTSA1 Overview


A device's maximum input capacitance is 28pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 21mA for this device. Drain current refers to the capacity of the device to conduct continuous current.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you need to apply a 600V drain to source voltage (Vdss).This device uses no drive voltage (0V 10V) to reduce its overall power consumption.

BSS126L6327HTSA1 Features


a continuous drain current (ID) of 21mA
a 600V drain to source voltage (Vdss)


BSS126L6327HTSA1 Applications


There are a lot of Infineon Technologies
BSS126L6327HTSA1 applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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