BSS126H6906XTSA1
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- Mfr.Part #
- BSS126H6906XTSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 21MA SOT23-3
- Stock
- 18,165
- In Stock ：
- 18,165
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Power Dissipation-Max :
- 500mW Ta
- Turn-Off Delay Time :
- 14 ns
- Vgs(th) (Max) @ Id :
- 1.6V @ 8μA
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Vgs (Max) :
- ±20V
- Max Operating Temperature :
- 150°C
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tape and Reel (TR)
- Mount :
- Surface Mount
- Rds On (Max) @ Id, Vgs :
- 500Ohm @ 16mA, 10V
- Drive Voltage (Max Rds On,Min Rds On) :
- 0V 10V
- RoHS Status :
- ROHS3 Compliant
- Factory Lead Time :
- 10 Weeks
- Continuous Drain Current (ID) :
- 21mA
- Drain to Source Voltage (Vdss) :
- 600V
- Rise Time :
- 9.7ns
- Mounting Type :
- Surface Mount
- Drain to Source Resistance :
- 280Ohm
- Published :
- 2012
- Gate Charge (Qg) (Max) @ Vgs :
- 2.1nC @ 5V
- Min Operating Temperature :
- -55°C
- Gate to Source Voltage (Vgs) :
- 20V
- FET Type :
- N-Channel
- FET Feature :
- Depletion Mode
- Current - Continuous Drain (Id) @ 25°C :
- 21mA Ta
- Operating Temperature :
- -55°C~150°C TJ
- Turn On Delay Time :
- 6.1 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 28pF @ 25V
- Series :
- SIPMOS®
- Supplier Device Package :
- SOT-23-3
- Fall Time (Typ) :
- 115 ns
- Number of Pins :
- 3
- Datasheets
- BSS126H6906XTSA1
N-Channel Tape & Reel (TR) 500Ohm @ 16mA, 10V ±20V 28pF @ 25V 2.1nC @ 5V 600V TO-236-3, SC-59, SOT-23-3
BSS126H6906XTSA1 Overview
A device's maximum input capacitance is 28pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 21mA for this device. Drain current refers to the capacity of the device to conduct continuous current.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 14 ns.The Drain-to-Source Resistance (DTS) of a MOSFET is 280Ohm when a specific gate-to-source voltage (VGS) is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 6.1 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you need to apply a 600V drain to source voltage (Vdss).This device uses no drive voltage (0V 10V) to reduce its overall power consumption.
BSS126H6906XTSA1 Features
a continuous drain current (ID) of 21mA
the turn-off delay time is 14 ns
single MOSFETs transistor is 280Ohm
a 600V drain to source voltage (Vdss)
BSS126H6906XTSA1 Applications
There are a lot of Infineon Technologies
BSS126H6906XTSA1 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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