BSS126 E6327

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

DS Breakdown Voltage-Min :

600V

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain Current-Max (Abs) (ID) :

0.021A

Power Dissipation-Max :

500mW Ta

Gate Charge (Qg) (Max) @ Vgs :

2.1nC @ 5V

Number of Elements :

1

Pin Count :

3

Published :

2007

Drain to Source Voltage (Vdss) :

600V

Mounting Type :

Surface Mount

Feedback Cap-Max (Crss) :

1.5 pF

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Current - Continuous Drain (Id) @ 25°C :

21mA Ta

HTS Code :

8541.21.00.95

Input Capacitance (Ciss) (Max) @ Vds :

28pF @ 25V

Surface Mount :

yes

Qualification Status :

Not Qualified

Vgs(th) (Max) @ Id :

1.6V @ 8μA

Number of Terminations :

3

Reach Compliance Code :

Compliant

ECCN Code :

EAR99

Package / Case :

TO-236-3, SC-59, SOT-23-3

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Form :

Gull wing

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Rds On (Max) @ Id, Vgs :

500 Ω @ 16mA, 10V

Operating Temperature :

-55°C~150°C TJ

Packaging :

Tape and Reel (TR)

FET Feature :

Depletion Mode

Series :

SIPMOS®

Vgs (Max) :

±20V

JESD-30 Code :

R-PDSO-G3

RoHS Status :

RoHS Compliant

Terminal Finish :

MATTE TIN

Transistor Element Material :

SILICON

Terminal Position :

Dual

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

0V 10V