BSS123NH6433XTMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Turn On Delay Time :

2.3 ns

Operating Mode :

ENHANCEMENT MODE

Pbfree Code :

yes

Length :

2.9mm

Number of Elements :

1

Drain-source On Resistance-Max :

6Ohm

Mounting Type :

Surface Mount

Terminal Form :

Gull wing

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

1.8V @ 13μA

Drain Current-Max (Abs) (ID) :

0.19A

Number of Terminations :

3

Height :

1mm

Width :

1.3mm

Number of Pins :

3

Vgs (Max) :

±20V

Fall Time (Typ) :

22 ns

Series :

OptiMOS™

Operating Temperature :

-55°C~150°C TJ

Power Dissipation-Max :

500mW Ta

RoHS Status :

ROHS3 Compliant

Rise Time :

3.2ns

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

0.9nC @ 10V

Factory Lead Time :

10 Weeks

Current - Continuous Drain (Id) @ 25°C :

190mA Ta

Packaging :

Cut Tape (CT)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

190mA

Gate to Source Voltage (Vgs) :

20V

Turn-Off Delay Time :

7.4 ns

Published :

2012

Input Capacitance (Ciss) (Max) @ Vds :

20.9pF @ 25V

Terminal Position :

Dual

Mount :

Surface Mount

DS Breakdown Voltage-Min :

100V

Element Configuration :

Single

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Package / Case :

TO-236-3, SC-59, SOT-23-3

Rds On (Max) @ Id, Vgs :

6 Ω @ 190mA, 10V

Reference Standard :

AEC-Q101

Additional Feature :

LOGIC LEVEL COMPATIBLE

Drain to Source Voltage (Vdss) :

100V