BSS123LT3G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Pbfree Code :

yes

Power Dissipation :

225mW

Surface Mount :

yes

Pin Count :

3

Terminal Finish :

Tin (Sn)

Rds On (Max) @ Id, Vgs :

6 Ω @ 100mA, 10V

Voltage - Rated DC :

100V

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

170mA Ta

Current Rating :

170mA

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

2.8V @ 1mA

JESD-609 Code :

e3

Vgs (Max) :

±20V

Drain to Source Breakdown Voltage :

100V

Time@Peak Reflow Temperature-Max (s) :

40

Input Capacitance (Ciss) (Max) @ Vds :

20pF @ 25V

Terminal Position :

Dual

Gate to Source Voltage (Vgs) :

20V

Number of Pins :

3

Drain-source On Resistance-Max :

6Ohm

Power Dissipation-Max :

225mW Ta

Transistor Element Material :

SILICON

Lead Free :

Lead Free

Continuous Drain Current (ID) :

170mA

Qualification Status :

Not Qualified

Transistor Application :

SWITCHING

Mounting Type :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

10V

Turn-Off Delay Time :

40 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

RoHS Compliant

Number of Elements :

1

Terminal Form :

Gull wing

Packaging :

Tape and Reel (TR)

Package / Case :

TO-236-3, SC-59, SOT-23-3

Element Configuration :

Single

Peak Reflow Temperature (Cel) :

260

Published :

2008

Operating Temperature :

-55°C~150°C TJ

Number of Terminations :

3