BSS123LT1G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Resistance :

6Ohm

Voltage - Rated DC :

100V

JESD-609 Code :

e3

Mount :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Packaging :

Cut Tape (CT)

Nominal Vgs :

20 V

FET Type :

N-Channel

Pin Count :

3

Mounting Type :

Surface Mount

Threshold Voltage :

800mV

Time@Peak Reflow Temperature-Max (s) :

40

Pbfree Code :

yes

Current - Continuous Drain (Id) @ 25°C :

170mA Ta

Transistor Element Material :

SILICON

Terminal Position :

Dual

Power Dissipation-Max :

225mW Ta

Turn On Delay Time :

20 ns

REACH SVHC :

No SVHC

Package / Case :

TO-236-3, SC-59, SOT-23-3

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Drain to Source Breakdown Voltage :

100V

Gate to Source Voltage (Vgs) :

20V

Rds On (Max) @ Id, Vgs :

6 Ω @ 100mA, 10V

Operating Temperature :

-55°C~150°C TJ

Number of Elements :

1

Lead Free :

Lead Free

Contact Plating :

Tin

Vgs(th) (Max) @ Id :

2.6V @ 1mA

Radiation Hardening :

No

Number of Pins :

3

Vgs (Max) :

±20V

Current Rating :

170mA

Continuous Drain Current (ID) :

170mA

Turn-Off Delay Time :

40 ns

ECCN Code :

EAR99

Length :

3.04mm

Number of Terminations :

3

Factory Lead Time :

15 Weeks

Operating Mode :

ENHANCEMENT MODE

Power Dissipation :

225mW

Height :

1.01mm

Peak Reflow Temperature (Cel) :

260

Input Capacitance (Ciss) (Max) @ Vds :

20pF @ 25V

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Published :

2003

Terminal Form :

Gull wing

Width :

1.4mm

Element Configuration :

Single