BSS123LT1

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

2.6V @ 1mA

Factory Lead Time :

15 Weeks

Package / Case :

TO-236-3, SC-59, SOT-23-3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Packaging :

Cut Tape (CT)

Gate to Source Voltage (Vgs) :

20V

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~150°C TJ

Mount :

Surface Mount

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Voltage - Rated DC :

100V

FET Type :

N-Channel

ECCN Code :

EAR99

Power Dissipation-Max :

225mW Ta

Mounting Type :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

20pF @ 25V

Current - Continuous Drain (Id) @ 25°C :

170mA Ta

Drain to Source Breakdown Voltage :

100V

Pin Count :

3

Turn On Delay Time :

20 ns

Height :

1.01mm

Threshold Voltage :

800mV

Vgs (Max) :

±20V

Number of Terminations :

3

Terminal Form :

Gull wing

RoHS Status :

ROHS3 Compliant

Operating Mode :

ENHANCEMENT MODE

JESD-609 Code :

e3

Number of Elements :

1

Turn-Off Delay Time :

40 ns

Lead Free :

Lead Free

Length :

3.04mm

Nominal Vgs :

20 V

Number of Pins :

3

Transistor Application :

SWITCHING

Resistance :

6Ohm

Contact Plating :

Tin

Time@Peak Reflow Temperature-Max (s) :

40

Published :

2003

Element Configuration :

Single

Power Dissipation :

225mW

Peak Reflow Temperature (Cel) :

260

Terminal Position :

Dual

Radiation Hardening :

No

REACH SVHC :

No SVHC

Pbfree Code :

yes

Continuous Drain Current (ID) :

170mA

Width :

1.4mm

Rds On (Max) @ Id, Vgs :

6 Ω @ 100mA, 10V

Current Rating :

170mA