BSS123L6327HTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Configuration :

SINGLE WITH BUILT-IN DIODE

Continuous Drain Current (ID) :

170mA

Pbfree Code :

yes

Gate to Source Voltage (Vgs) :

20V

Additional Feature :

LOGIC LEVEL COMPATIBLE

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Power Dissipation-Max :

360mW Ta

Transistor Element Material :

SILICON

Drain-source On Resistance-Max :

6Ohm

Mount :

Surface Mount

Pin Count :

3

Power Dissipation :

360mW

Packaging :

Tape and Reel (TR)

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

69pF @ 25V

Published :

1999

Time@Peak Reflow Temperature-Max (s) :

40

Current - Continuous Drain (Id) @ 25°C :

170mA Ta

Peak Reflow Temperature (Cel) :

260

ECCN Code :

EAR99

Rise Time :

3.1ns

Gate Charge (Qg) (Max) @ Vgs :

2.67nC @ 10V

Fall Time (Typ) :

25 ns

RoHS Status :

RoHS Compliant

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-236-3, SC-59, SOT-23-3

Number of Terminations :

3

JESD-609 Code :

e3

Series :

SIPMOS®

Terminal Finish :

MATTE TIN

Mounting Type :

Surface Mount

Rds On (Max) @ Id, Vgs :

6 Ω @ 170mA, 10V

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Turn On Delay Time :

2.7 ns

Vgs (Max) :

±20V

Turn-Off Delay Time :

9.9 ns

Vgs(th) (Max) @ Id :

1.8V @ 50µA

Terminal Position :

Dual

Number of Pins :

3

Drain to Source Voltage (Vdss) :

100V

Terminal Form :

Gull wing

Radiation Hardening :

No