BSS123L

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Mfr.Part #
BSS123L
Manufacturer
onsemi
Package / Case
TO-236-3, SC-59, SOT-23-3
Datasheet
Download
Description
MOSFET N-CH 100V 170MA SOT23-3
Stock
19,868
In Stock :
19,868

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Number of Terminations :
3
Factory Lead Time :
8 Weeks
Fall Time (Typ) :
5.6 ns
Rds On (Max) @ Id, Vgs :
6 Ω @ 170mA, 10V
Power Dissipation-Max :
360mW Ta
Power Dissipation :
225mW
Pbfree Code :
yes
Number of Elements :
1
Weight :
30mg
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Threshold Voltage :
1.6V
Transistor Element Material :
SILICON
Height :
1.11mm
Continuous Drain Current (ID) :
170mA
Rise Time :
1.7ns
Mount :
Surface Mount
JESD-609 Code :
e3
Transistor Application :
SWITCHING
Terminal Position :
Dual
Number of Channels :
1
REACH SVHC :
No SVHC
Lifecycle Status :
ACTIVE (Last Updated: 4 days ago)
Peak Reflow Temperature (Cel) :
260
Gate to Source Voltage (Vgs) :
20V
Drain to Source Breakdown Voltage :
100V
Turn On Delay Time :
20 ns
Current - Continuous Drain (Id) @ 25°C :
170mA Ta
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Operating Mode :
ENHANCEMENT MODE
Terminal Form :
Gull wing
Number of Pins :
3
RoHS Status :
ROHS3 Compliant
Input Capacitance (Ciss) (Max) @ Vds :
21.5pF @ 25V
Packaging :
Tape and Reel (TR)
Package / Case :
TO-236-3, SC-59, SOT-23-3
Operating Temperature :
-55°C~150°C TJ
Vgs (Max) :
±20V
Mounting Type :
Surface Mount
Terminal Finish :
Tin (Sn)
Published :
2012
Element Configuration :
Single
FET Type :
N-Channel
Turn-Off Delay Time :
40 ns
Vgs(th) (Max) @ Id :
2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs :
2.5nC @ 10V
ECCN Code :
EAR99
Max Junction Temperature (Tj) :
150°C
Time@Peak Reflow Temperature-Max (s) :
30
Datasheets
BSS123L
Introducing Transistors - FETs, MOSFETs - Single onsemi BSS123L from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Number of Channels:1, Number of Pins:3, Package / Case:TO-236-3, SC-59, SOT-23-3, Operating Temperature:-55°C~150°C TJ, Mounting Type:Surface Mount, BSS123L pinout, BSS123L datasheet PDF, BSS123L amp .Beyond Transistors - FETs, MOSFETs - Single onsemi BSS123L ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi BSS123L


N-Channel Tape & Reel (TR) 6 Ω @ 170mA, 10V ±20V 21.5pF @ 25V 2.5nC @ 10V TO-236-3, SC-59, SOT-23-3

BSS123L Description

This N-channel enhancement mode field effect transistor is produced using high cell density, trench MOSFET technology. This product minimizes on-state resistance while providing rugged, reliable, and fast switching performance. This product is particularly suited for low-voltage, low-current applications such as small servo motor control, power MOSFET gate drivers, logic level transistor, high-speed line drivers, power management power supply, and switching applications.



BSS123L Features

0.17 A, 100V, Rois/ON)=6Q atVGs= 10V

Ros(ON)= 100atVGs=45V

High-Density Cell Design for Low RDs/ON)

Rugged and Reliable

Compact Industry Standard SOT-23 Surface Mount

Package

Very Low Capacitance

Fast Switching Speed



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