BSS123E6327

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

360mW Ta

Mounting Type :

Surface Mount

Vgs (Max) :

±20V

JESD-609 Code :

e3

Gate to Source Voltage (Vgs) :

20V

Operating Temperature :

-55°C~150°C TJ

Operating Mode :

ENHANCEMENT MODE

Current Rating :

170mA

Terminal Finish :

Matte Tin (Sn)

Additional Feature :

LOGIC LEVEL COMPATIBLE

Power Dissipation :

360mW

Vgs(th) (Max) @ Id :

1.8V @ 50µA

Peak Reflow Temperature (Cel) :

260

Configuration :

SINGLE WITH BUILT-IN DIODE

Packaging :

Tape and Reel (TR)

Number of Pins :

3

Terminal Position :

Dual

Input Capacitance (Ciss) (Max) @ Vds :

69pF @ 25V

Feedback Cap-Max (Crss) :

6 pF

Published :

1999

Series :

SIPMOS®

Continuous Drain Current (ID) :

170mA

Package / Case :

TO-236-3, SC-59, SOT-23-3

Number of Elements :

1

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

RoHS Status :

RoHS Compliant

Rds On (Max) @ Id, Vgs :

6 Ω @ 170mA, 10V

Mount :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

2.67nC @ 10V

Qualification Status :

Not Qualified

Terminal Form :

Gull wing

Rise Time :

5ns

FET Type :

N-Channel

Pin Count :

3

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

170mA Ta

Number of Terminations :

3

Voltage - Rated DC :

100V

Lead Free :

Contains Lead