BSS123ATA

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

REACH SVHC :

No SVHC

Element Configuration :

Single

Terminal Position :

Dual

Reach Compliance Code :

Unknown

Qualification Status :

Not Qualified

Number of Terminations :

3

Voltage - Rated DC :

100V

Termination :

SMD/SMT

Length :

2.9mm

Width :

1.3mm

Fall Time (Typ) :

10 ns

Rise Time :

10ns

Peak Reflow Temperature (Cel) :

260

Lead Free :

Contains Lead

Number of Channels :

1

Current Rating :

170mA

Terminal Form :

Gull wing

Vgs (Max) :

±20V

Power Dissipation-Max :

360mW Ta

Current - Continuous Drain (Id) @ 25°C :

170mA Ta

Time@Peak Reflow Temperature-Max (s) :

40

RoHS Status :

RoHS Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

25pF @ 25V

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

6 Ω @ 170mA, 10V

Vgs(th) (Max) @ Id :

2V @ 1mA

Number of Elements :

1

Turn-Off Delay Time :

15 ns

Dual Supply Voltage :

100V

Height :

1mm

Current :

15A

Turn On Delay Time :

10 ns

Number of Pins :

3

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Continuous Drain Current (ID) :

170mA

Gate to Source Voltage (Vgs) :

20V

Terminal Finish :

Matte Tin (Sn)

Operating Temperature :

-55°C~150°C TJ

Mounting Type :

Surface Mount

JESD-609 Code :

e3

Weight :

7.994566mg

Published :

2012

Drain to Source Breakdown Voltage :

100V

Mount :

Surface Mount

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

Package / Case :

TO-236-3, SC-59, SOT-23-3

Voltage :

100V

Transistor Element Material :

SILICON

Nominal Vgs :

2 V

Packaging :

Tape and Reel (TR)

Power Dissipation :

360mW