BSS123 E6433

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

SIPMOS®

DS Breakdown Voltage-Min :

100V

Number of Elements :

1

Drain Current-Max (Abs) (ID) :

0.17A

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

1.8V @ 50µA

Operating Mode :

ENHANCEMENT MODE

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Finish :

Tin/Lead (Sn/Pb)

Packaging :

Tape and Reel (TR)

Drain-source On Resistance-Max :

10Ohm

FET Type :

N-Channel

Transistor Application :

SWITCHING

Vgs (Max) :

±20V

Power Dissipation-Max :

360mW Ta

Terminal Position :

Dual

JESD-609 Code :

e0

Package / Case :

TO-236-3, SC-59, SOT-23-3

Transistor Element Material :

SILICON

RoHS Status :

Non-RoHS Compliant

Terminal Form :

Gull wing

Feedback Cap-Max (Crss) :

6 pF

Input Capacitance (Ciss) (Max) @ Vds :

69pF @ 25V

Additional Feature :

LOGIC LEVEL COMPATIBLE

Gate Charge (Qg) (Max) @ Vgs :

2.67nC @ 10V

Number of Terminations :

3

Rds On (Max) @ Id, Vgs :

6 Ω @ 170mA, 10V

Current - Continuous Drain (Id) @ 25°C :

170mA Ta

Operating Temperature :

-55°C~150°C TJ

Qualification Status :

Not Qualified

JESD-30 Code :

R-PDSO-G3

HTS Code :

8541.21.00.95

Drain to Source Voltage (Vdss) :

100V

Mounting Type :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Surface Mount :

yes