BSS123
- Mfr.Part #
- BSS123
- Manufacturer
- ANBON SEMICONDUCTOR (INT'L) LIMITED
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- N-CHANNEL ENHANCEMENT MODE MOSFE
- Stock
- 25,763
- In Stock :
- 25,763
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- Manufacturer :
- ANBON SEMICONDUCTOR (INT'L) LIMITED
- Product Category :
- Transistors - FETs, MOSFETs - Single
- REACH SVHC :
- No SVHC
- RoHS Status :
- ROHS3 Compliant
- Rise Time :
- 9ns
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Max Operating Temperature :
- 150°C
- Threshold Voltage :
- 1.7V
- Number of Channels :
- 1
- Rds On Max :
- 6 Ω
- Min Operating Temperature :
- -55°C
- Mounting Type :
- Surface Mount
- Turn-Off Delay Time :
- 17 ns
- Fall Time (Typ) :
- 9 ns
- Gate Charge (Qg) (Max) @ Vgs :
- 2.5nC @ 10V
- Voltage :
- 100V
- Height :
- 1.11mm
- Vgs(th) (Max) @ Id :
- 2V @ 1mA
- Vgs (Max) :
- ±20V
- Number of Pins :
- 3
- Voltage - Rated DC :
- 100V
- Factory Lead Time :
- 8 Weeks
- Current :
- 15A
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Drain to Source Breakdown Voltage :
- 100V
- Radiation Hardening :
- No
- Number of Elements :
- 1
- Lead Free :
- Lead Free
- Power Dissipation-Max :
- 360mW Ta
- Operating Temperature :
- -55°C~150°C TJ
- Drain to Source Voltage (Vdss) :
- 100V
- Dual Supply Voltage :
- 100V
- Base Part Number :
- BSS123
- Input Capacitance :
- 73pF
- Length :
- 2.92mm
- Mount :
- Surface Mount
- Resistance :
- 6Ohm
- Published :
- 2003
- Rds On (Max) @ Id, Vgs :
- 6Ohm @ 170mA, 10V
- Drain to Source Resistance :
- 1.2Ohm
- Nominal Vgs :
- 1.7 V
- Width :
- 1.3mm
- Contact Plating :
- Tin
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Max Junction Temperature (Tj) :
- 150°C
- Current Rating :
- 170mA
- Turn On Delay Time :
- 1.7 ns
- Current - Continuous Drain (Id) @ 25°C :
- 170mA Ta
- FET Type :
- N-Channel
- Continuous Drain Current (ID) :
- 170mA
- Gate to Source Voltage (Vgs) :
- 20V
- Supplier Device Package :
- SOT-23-3
- Input Capacitance (Ciss) (Max) @ Vds :
- 73pF @ 25V
- Packaging :
- Tape and Reel (TR)
- Power Dissipation :
- 360mW
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Element Configuration :
- Single
- Datasheets
- BSS123
N-Channel Tape & Reel (TR) 6Ohm @ 170mA, 10V ±20V 73pF @ 25V 2.5nC @ 10V 100V TO-236-3, SC-59, SOT-23-3
BSS123 Description
ON Semiconductor's patented, high-cell-density DMOS technology is used to make BSS123 N-Channel enhancement mode field effect transistors. These components have been engineered to provide durable, dependable, and rapid switching performance while minimizing onstate resistance. Low voltage, low current applications like as tiny servo motor control, power MOSFET gate drivers, and other switching applications are well suited for these products.
BSS123 Features
RDS(ON) = 6W @ VGS = 10 V @ 0.17 A, 100 V
RDS(ON) = 10W @ 4.5 V VGS
For extremely low RDS, a high-density cell design is used (ON)
Rugged and dependable
SOT-23 surface mount package is a compact industry standard.
BSS123 Applications
Switching applications.
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