BSS123-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Form :

Gull wing

REACH SVHC :

No SVHC

Number of Elements :

1

Package / Case :

TO-236-3, SC-59, SOT-23-3

Operating Mode :

ENHANCEMENT MODE

Threshold Voltage :

1.4V

Number of Pins :

3

Operating Temperature :

-55°C~150°C TJ

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

Lead Free :

Lead Free

Element Configuration :

Single

Power Dissipation :

300mW

Input Capacitance (Ciss) (Max) @ Vds :

60pF @ 25V

Pbfree Code :

yes

Fall Time (Typ) :

8 ns

Gate to Source Voltage (Vgs) :

20V

Continuous Drain Current (ID) :

170mA

Voltage :

100V

Height :

1.1mm

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Junction Temperature (Tj) :

150°C

Current :

15A

Packaging :

Tape and Reel (TR)

Published :

1999

Length :

2.9mm

JESD-609 Code :

e3

Feedback Cap-Max (Crss) :

6 pF

Number of Terminations :

3

Pin Count :

3

Vgs (Max) :

±20V

Voltage - Rated DC :

100V

Turn On Delay Time :

8 ns

Nominal Vgs :

1.4 V

Terminal Finish :

Matte Tin (Sn)

Resistance :

6Ohm

Peak Reflow Temperature (Cel) :

260

Current Rating :

170mA

ECCN Code :

EAR99

Power Dissipation-Max :

300mW Ta

Factory Lead Time :

16 Weeks

Drain to Source Breakdown Voltage :

100V

Time@Peak Reflow Temperature-Max (s) :

40

Vgs(th) (Max) @ Id :

2V @ 1mA

Number of Channels :

1

RoHS Status :

ROHS3 Compliant

Turn-Off Delay Time :

13 ns

Current - Continuous Drain (Id) @ 25°C :

170mA Ta

Weight :

7.994566mg

Width :

1.3mm

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

6 Ω @ 170mA, 10V

Mounting Type :

Surface Mount

Mount :

Surface Mount

Rise Time :

8ns

Terminal Position :

Dual