BSR33TA

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Mfr.Part #
BSR33TA
Manufacturer
Diodes Incorporated
Package / Case
TO-243AA
Datasheet
Download
Description
TRANS PNP 80V 1A SOT89-3
Stock
19,555
In Stock :
19,555

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Manufacturer :
Diodes Incorporated
Product Category :
Transistors - Bipolar (BJT) - Single
Element Configuration :
Single
Packaging :
Tape and Reel (TR)
Power Dissipation :
1W
Number of Terminations :
3
Polarity/Channel Type :
PNP
Emitter Base Voltage (VEBO) :
5V
Time@Peak Reflow Temperature-Max (s) :
40
Length :
4.5mm
Published :
2006
Frequency :
100MHz
Number of Pins :
4
Max Collector Current :
1A
Collector Base Voltage (VCBO) :
90V
Max Power Dissipation :
1W
JESD-30 Code :
R-PSSO-F3
Collector Emitter Breakdown Voltage :
80V
Package / Case :
TO-243AA
Mount :
Surface Mount
Current Rating :
-1A
Width :
2.5mm
Factory Lead Time :
14 Weeks
Current - Collector Cutoff (Max) :
100nA ICBO
Collector Emitter Saturation Voltage :
-500mV
JESD-609 Code :
e3
Termination :
SMD/SMT
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Voltage - Rated DC :
-80V
Pbfree Code :
No
Max Breakdown Voltage :
80V
Contact Plating :
Tin
Vce Saturation (Max) @ Ib, Ic :
500mV @ 50mA, 500mA
Weight :
51.993025mg
Height :
1.5mm
hFE Min :
50
REACH SVHC :
No SVHC
ECCN Code :
EAR99
Transition Frequency :
100MHz
Transistor Type :
PNP
Mounting Type :
Surface Mount
Qualification Status :
Not Qualified
Continuous Collector Current :
-1A
Peak Reflow Temperature (Cel) :
260
Base Part Number :
BSR33
RoHS Status :
ROHS3 Compliant
Lead Free :
Lead Free
Transistor Element Material :
SILICON
Operating Temperature :
-65°C~150°C TJ
Case Connection :
COLLECTOR
Transistor Application :
SWITCHING
Collector Emitter Voltage (VCEO) :
80V
Gain Bandwidth Product :
100MHz
Terminal Form :
Flat
Number of Elements :
1
DC Current Gain (hFE) (Min) @ Ic, Vce :
100 @ 100mA 5V
Datasheets
BSR33TA
Introducing Transistors - Bipolar (BJT) - Single Diodes Incorporated BSR33TA from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Number of Pins:4, Package / Case:TO-243AA, Mounting Type:Surface Mount, Base Part Number:BSR33, Operating Temperature:-65°C~150°C TJ, BSR33TA pinout, BSR33TA datasheet PDF, BSR33TA amp .Beyond Transistors - Bipolar (BJT) - Single Diodes Incorporated BSR33TA ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Diodes Incorporated BSR33TA


PNP -65°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-243AA Tape & Reel (TR) Surface Mount

BSR33TA Overview


DC current gain in this device equals 100 @ 100mA 5V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is -500mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 50mA, 500mA.Single BJT transistor is essential to maintain the continuous collector voltage at -1A to achieve high efficiency.An emitter's base voltage can be kept at 5V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -1A current rating.As a result, the part has a transition frequency of 100MHz.Breakdown input voltage is 80V volts.In extreme cases, the collector current can be as low as 1A volts.

BSR33TA Features


the DC current gain for this device is 100 @ 100mA 5V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is -1A
a transition frequency of 100MHz


BSR33TA Applications


There are a lot of Diodes Incorporated
BSR33TA applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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