BSR30,115

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Single

Gain Bandwidth Product :

100MHz

Factory Lead Time :

4 Weeks

Weight :

4.535924g

Case Connection :

COLLECTOR

JESD-609 Code :

e3

Transition Frequency :

100MHz

Vce Saturation (Max) @ Ib, Ic :

500mV @ 50mA, 500mA

Emitter Base Voltage (VEBO) :

5V

Length :

6.35mm

RoHS Status :

ROHS3 Compliant

Power Dissipation :

1.35W

Current - Collector Cutoff (Max) :

100nA ICBO

Max Collector Current :

1A

Collector Emitter Voltage (VCEO) :

60V

Collector Base Voltage (VCBO) :

70V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Single

Frequency :

100MHz

Package / Case :

TO-243AA

Width :

6.35mm

Lead Free :

Lead Free

DC Current Gain (hFE) (Min) @ Ic, Vce :

40 @ 100mA 5V

Max Power Dissipation :

1.35W

ECCN Code :

EAR99

Collector Emitter Breakdown Voltage :

60V

Number of Pins :

4

Transistor Application :

SWITCHING

Radiation Hardening :

No

Polarity/Channel Type :

PNP

Mount :

Surface Mount

Transistor Element Material :

SILICON

Pin Count :

3

Number of Terminations :

3

Operating Temperature :

150°C TJ

Transistor Type :

PNP

Terminal Form :

Flat

Contact Plating :

Tin

REACH SVHC :

No SVHC

Base Part Number :

BSR30

Height :

6.35mm

Number of Elements :

1

Packaging :

Tape and Reel (TR)

JESD-30 Code :

R-PSSO-F3

Max Breakdown Voltage :

60V

Published :

2009

Mounting Type :

Surface Mount