BSP89 E6327

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Form :

Gull wing

Additional Feature :

LOGIC LEVEL COMPATIBLE

Series :

SIPMOS®

FET Type :

N-Channel

RoHS Status :

Non-RoHS Compliant

Surface Mount :

yes

Pulsed Drain Current-Max (IDM) :

1.4A

Mounting Type :

Surface Mount

Vgs(th) (Max) @ Id :

1.8V @ 108μA

Transistor Application :

SWITCHING

Number of Terminations :

4

Rds On (Max) @ Id, Vgs :

6 Ω @ 350mA, 10V

Drain-source On Resistance-Max :

6Ohm

Drain Current-Max (Abs) (ID) :

0.35A

Packaging :

Tape and Reel (TR)

Operating Temperature :

-55°C~150°C TJ

Operating Mode :

ENHANCEMENT MODE

ECCN Code :

EAR99

Terminal Position :

Dual

Transistor Element Material :

SILICON

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Case Connection :

DRAIN

Gate Charge (Qg) (Max) @ Vgs :

6.4nC @ 10V

Number of Elements :

1

DS Breakdown Voltage-Min :

240V

Drain to Source Voltage (Vdss) :

240V

JESD-609 Code :

e3

Pin Count :

4

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Finish :

MATTE TIN

Vgs (Max) :

±20V

Input Capacitance (Ciss) (Max) @ Vds :

140pF @ 25V

Power Dissipation-Max :

1.8W Ta

HTS Code :

8541.29.00.75

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

350mA Ta

Qualification Status :

Not Qualified

Package / Case :

TO-261-4, TO-261AA

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Published :

2007

JESD-30 Code :

R-PDSO-G4