BSP88L6327
- Mfr.Part #
- BSP88L6327
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- N-CHANNEL POWER MOSFET
- Stock
- 22,754
- In Stock :
- 22,754
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Min Operating Temperature :
- -55 °C
- Power Dissipation (Max) :
- 1.8W (Ta)
- Power Dissipation :
- 1.8 W
- JESD-30 Code :
- R-PDSO-G4
- Surface Mount :
- yes
- Qualification Status :
- Not Qualified
- Transistor Element Material :
- SILICON
- Drain to Source Resistance :
- 6 Ω
- Current Rating :
- 350 mA
- Peak Reflow Temperature (Cel) :
- 260
- Vgs(th) (Max) @ Id :
- 1.4V @ 108µA
- Rds On (Max) @ Id, Vgs :
- 6Ohm @ 350mA, 10V
- JESD-609 Code :
- e3
- Number of Pins :
- 4
- Terminal Position :
- Dual
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- ECCN Code :
- EAR99
- Max Operating Temperature :
- 150 °C
- Vgs (Max) :
- ±20V
- Lead Free :
- Lead Free
- Number of Terminals :
- 4
- Product Status :
- Active
- HTS Code :
- 8541.29.00.95
- Continuous Drain Current (ID) :
- 350 mA
- Radiation Hardening :
- No
- Series :
- SIPMOS®
- Mounting Type :
- Surface Mount
- Package Shape :
- RECTANGULAR
- Rise Time :
- 3.5 ns
- Subcategory :
- FET General Purpose Power
- Current - Continuous Drain (Id) @ 25°C :
- 350mA (Ta)
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Case Connection :
- DRAIN
- Number of Elements :
- 1
- Turn-Off Delay Time :
- 17.9 ns
- Pbfree Code :
- yes
- Voltage Rating (DC) :
- 240 V
- Manufacturer :
- Infineon Technologies AG
- Rds On Max :
- 6 Ω
- RoHS :
- Compliant
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Operating Mode :
- ENHANCEMENT MODE
- Pulsed Drain Current-Max (IDM) :
- 1.4 A
- Drain-source On Resistance-Max :
- 6 Ω
- FET Type :
- N-Channel
- Power Dissipation-Max (Abs) :
- 1.8 W
- Gate Charge (Qg) (Max) @ Vgs :
- 6.8 nC @ 10 V
- Gate to Source Voltage (Vgs) :
- 20 V
- Technology :
- MOSFET (Metal Oxide)
- Package :
- Bulk
- Max Power Dissipation :
- 1.8 W
- Polarity/Channel Type :
- N-Channel
- Mount :
- Surface Mount
- FET Feature :
- -
- Reach Compliance Code :
- Compliant
- Turn-On Delay Time :
- 3.6 ns
- Nominal Vgs :
- 1 V
- REACH SVHC :
- No SVHC
- Drain to Source Breakdown Voltage :
- 240 V
- Drain Current-Max (Abs) (ID) :
- 0.35 A
- DS Breakdown Voltage-Min :
- 240 V
- Drive Voltage (Max Rds On, Min Rds On) :
- 2.8V, 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 95 pF @ 25 V
- Terminal Form :
- Gull wing
- Drain to Source Voltage (Vdss) :
- 240 V
- Supplier Device Package :
- PG-SOT223-4-21
- Input Capacitance :
- 95 pF
- Additional Feature :
- LOGIC LEVEL COMPATIBLE
- Pin Count :
- 4
- Terminal Finish :
- Matte Tin (Sn)
- Package / Case :
- TO-261-4, TO-261AA
- Datasheets
- BSP88L6327

MOSFET (Metal Oxide) N-Channel 6Ohm @ 350mA, 10V ±20V 95 pF @ 25 V 6.8 nC @ 10 V 240 V TO-261-4, TO-261AA
BSP88L6327 Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 95 pF @ 25 V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 350 mA amps.In this device, the drain-source breakdown voltage is 240 V and VGS=240 V, so the drain-source breakdown voltage is 240 V in this case.A device can conduct a maximum continuous current of [0.35 A] according to its drain current.It is [17.9 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 1.4 A.Single MOSFETs transistor is the resistance between the drain and source of a MOSFET when the gate-to-source voltage (VGS) is applied to bias the device to the on state, and Single MOSFETs transistor is 6 Ω.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20 V.The DS breakdown voltage should be maintained above 240 V to maintain normal operation.To operate this transistor, you will need a 240 V drain to source voltage (Vdss).
BSP88L6327 Features
a continuous drain current (ID) of 350 mA
a drain-to-source breakdown voltage of 240 V voltage
the turn-off delay time is 17.9 ns
based on its rated peak drain current 1.4 A.
single MOSFETs transistor is 6 Ω
a 240 V drain to source voltage (Vdss)
BSP88L6327 Applications
There are a lot of Infineon
BSP88L6327 applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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