BSP88L6327

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Mfr.Part #
BSP88L6327
Manufacturer
Infineon Technologies
Package / Case
TO-261-4, TO-261AA
Datasheet
Download
Description
N-CHANNEL POWER MOSFET
Stock
22,754
In Stock :
22,754

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
Min Operating Temperature :
-55 °C
Power Dissipation (Max) :
1.8W (Ta)
Power Dissipation :
1.8 W
JESD-30 Code :
R-PDSO-G4
Surface Mount :
yes
Qualification Status :
Not Qualified
Transistor Element Material :
SILICON
Drain to Source Resistance :
6 Ω
Current Rating :
350 mA
Peak Reflow Temperature (Cel) :
260
Vgs(th) (Max) @ Id :
1.4V @ 108µA
Rds On (Max) @ Id, Vgs :
6Ohm @ 350mA, 10V
JESD-609 Code :
e3
Number of Pins :
4
Terminal Position :
Dual
FET Technology :
METAL-OXIDE SEMICONDUCTOR
ECCN Code :
EAR99
Max Operating Temperature :
150 °C
Vgs (Max) :
±20V
Lead Free :
Lead Free
Number of Terminals :
4
Product Status :
Active
HTS Code :
8541.29.00.95
Continuous Drain Current (ID) :
350 mA
Radiation Hardening :
No
Series :
SIPMOS®
Mounting Type :
Surface Mount
Package Shape :
RECTANGULAR
Rise Time :
3.5 ns
Subcategory :
FET General Purpose Power
Current - Continuous Drain (Id) @ 25°C :
350mA (Ta)
Operating Temperature :
-55°C ~ 150°C (TJ)
Case Connection :
DRAIN
Number of Elements :
1
Turn-Off Delay Time :
17.9 ns
Pbfree Code :
yes
Voltage Rating (DC) :
240 V
Manufacturer :
Infineon Technologies AG
Rds On Max :
6 Ω
RoHS :
Compliant
Configuration :
SINGLE WITH BUILT-IN DIODE
Operating Mode :
ENHANCEMENT MODE
Pulsed Drain Current-Max (IDM) :
1.4 A
Drain-source On Resistance-Max :
6 Ω
FET Type :
N-Channel
Power Dissipation-Max (Abs) :
1.8 W
Gate Charge (Qg) (Max) @ Vgs :
6.8 nC @ 10 V
Gate to Source Voltage (Vgs) :
20 V
Technology :
MOSFET (Metal Oxide)
Package :
Bulk
Max Power Dissipation :
1.8 W
Polarity/Channel Type :
N-Channel
Mount :
Surface Mount
FET Feature :
-
Reach Compliance Code :
Compliant
Turn-On Delay Time :
3.6 ns
Nominal Vgs :
1 V
REACH SVHC :
No SVHC
Drain to Source Breakdown Voltage :
240 V
Drain Current-Max (Abs) (ID) :
0.35 A
DS Breakdown Voltage-Min :
240 V
Drive Voltage (Max Rds On, Min Rds On) :
2.8V, 10V
Input Capacitance (Ciss) (Max) @ Vds :
95 pF @ 25 V
Terminal Form :
Gull wing
Drain to Source Voltage (Vdss) :
240 V
Supplier Device Package :
PG-SOT223-4-21
Input Capacitance :
95 pF
Additional Feature :
LOGIC LEVEL COMPATIBLE
Pin Count :
4
Terminal Finish :
Matte Tin (Sn)
Package / Case :
TO-261-4, TO-261AA
Datasheets
BSP88L6327
Introducing Transistors - FETs, MOSFETs - Single Infineon Technologies BSP88L6327 from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:4, Mounting Type:Surface Mount, Operating Temperature:-55°C ~ 150°C (TJ), Package / Case:TO-261-4, TO-261AA, BSP88L6327 pinout, BSP88L6327 datasheet PDF, BSP88L6327 amp .Beyond Transistors - FETs, MOSFETs - Single Infineon Technologies BSP88L6327 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies BSP88L6327


MOSFET (Metal Oxide) N-Channel 6Ohm @ 350mA, 10V ±20V 95 pF @ 25 V 6.8 nC @ 10 V 240 V TO-261-4, TO-261AA

BSP88L6327 Overview


Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 95 pF @ 25 V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 350 mA amps.In this device, the drain-source breakdown voltage is 240 V and VGS=240 V, so the drain-source breakdown voltage is 240 V in this case.A device can conduct a maximum continuous current of [0.35 A] according to its drain current.It is [17.9 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 1.4 A.Single MOSFETs transistor is the resistance between the drain and source of a MOSFET when the gate-to-source voltage (VGS) is applied to bias the device to the on state, and Single MOSFETs transistor is 6 Ω.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20 V.The DS breakdown voltage should be maintained above 240 V to maintain normal operation.To operate this transistor, you will need a 240 V drain to source voltage (Vdss).

BSP88L6327 Features


a continuous drain current (ID) of 350 mA
a drain-to-source breakdown voltage of 240 V voltage
the turn-off delay time is 17.9 ns
based on its rated peak drain current 1.4 A.
single MOSFETs transistor is 6 Ω
a 240 V drain to source voltage (Vdss)


BSP88L6327 Applications


There are a lot of Infineon
BSP88L6327 applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
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