BSP88H6327XTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

1.8W Ta

Factory Lead Time :

10 Weeks

Rds On (Max) @ Id, Vgs :

6Ohm @ 350mA, 10V

Drain to Source Voltage (Vdss) :

240V

Lead Free :

Lead Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Min Operating Temperature :

-55°C

Packaging :

Tape and Reel (TR)

Width :

3.5mm

Input Capacitance (Ciss) (Max) @ Vds :

95pF @ 25V

Number of Pins :

4

Current - Continuous Drain (Id) @ 25°C :

350mA Ta

Published :

2008

Max Dual Supply Voltage :

240V

Supplier Device Package :

PG-SOT223-4

Turn-Off Delay Time :

17.9 ns

Series :

SIPMOS®

Length :

6.5mm

Weight :

250.212891mg

Rds On Max :

600 mΩ

Turn On Delay Time :

3.6 ns

Halogen Free :

Halogen Free

RoHS Status :

ROHS3 Compliant

Fall Time (Typ) :

18.9 ns

Number of Channels :

1

Drive Voltage (Max Rds On,Min Rds On) :

2.8V 10V

Power Dissipation :

1.8W

Package / Case :

TO-261-4, TO-261AA

Contact Plating :

Tin

Mounting Type :

Surface Mount

Continuous Drain Current (ID) :

350mA

Gate to Source Voltage (Vgs) :

20V

Height :

1.6mm

FET Type :

N-Channel

Drain to Source Breakdown Voltage :

240V

Vgs (Max) :

±20V

Mount :

Surface Mount

Max Operating Temperature :

150°C

Input Capacitance :

76pF

Vgs(th) (Max) @ Id :

1.4V @ 108µA

Number of Elements :

1

Drain to Source Resistance :

6Ohm

Gate Charge (Qg) (Max) @ Vgs :

6.8nC @ 10V

Operating Temperature :

-55°C~150°C TJ

Rise Time :

3.5ns