BSO303SPNTMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Voltage (Vdss) :

30V

Operating Temperature :

-55°C~150°C TJ

Power Dissipation-Max :

2.35W Ta

ECCN Code :

EAR99

Current - Continuous Drain (Id) @ 25°C :

8.9A Ta

DS Breakdown Voltage-Min :

30V

Packaging :

Tape and Reel (TR)

Terminal Position :

Dual

Drain-source On Resistance-Max :

0.021Ohm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE

Avalanche Energy Rating (Eas) :

97 mJ

Number of Elements :

1

FET Type :

P-Channel

Surface Mount :

yes

Drain Current-Max (Abs) (ID) :

8.9A

JESD-30 Code :

R-PDSO-G8

Published :

2002

Pulsed Drain Current-Max (IDM) :

35.6A

Mounting Type :

Surface Mount

Vgs(th) (Max) @ Id :

2V @ 100µA

Additional Feature :

AVALANCHE RATED,LOGIC LEVEL COMPATIBLE

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Number of Terminations :

8

Package / Case :

8-SOIC (0.154, 3.90mm Width)

RoHS Status :

Non-RoHS Compliant

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Form :

Gull wing

Series :

OptiMOS™

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

21m Ω @ 8.9A, 10V

Vgs (Max) :

±20V

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Input Capacitance (Ciss) (Max) @ Vds :

1754pF @ 25V

Gate Charge (Qg) (Max) @ Vgs :

69nC @ 10V

HTS Code :

8541.29.00.95