BSO301SPNTMA1
- Mfr.Part #
- BSO301SPNTMA1
- Manufacturer
- Infineon Technologies
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET P-CH 30V 12.6A 8DSO
- Stock
- 22,679
- In Stock :
- 22,679
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Continuous Drain Current (ID) :
- 14.9A
- Mount :
- Surface Mount
- Operating Temperature :
- -55°C~150°C TJ
- Packaging :
- Tape and Reel (TR)
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- RoHS Status :
- Non-RoHS Compliant
- Terminal Form :
- Gull wing
- Operating Mode :
- ENHANCEMENT MODE
- Pulsed Drain Current-Max (IDM) :
- 60A
- Terminal Position :
- Dual
- Turn On Delay Time :
- 15 ns
- ECCN Code :
- EAR99
- Transistor Application :
- SWITCHING
- Vgs (Max) :
- ±20V
- Transistor Element Material :
- SILICON
- Gate Charge (Qg) (Max) @ Vgs :
- 136nC @ 10V
- FET Type :
- P-Channel
- Current - Continuous Drain (Id) @ 25°C :
- 12.6A Ta
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Number of Pins :
- 8
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Rise Time :
- 22ns
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Power Dissipation :
- 1.79W
- Mounting Type :
- Surface Mount
- Fall Time (Typ) :
- 110 ns
- Power Dissipation-Max :
- 2.5W Ta
- Turn-Off Delay Time :
- 130 ns
- Published :
- 2002
- Gate to Source Voltage (Vgs) :
- 20V
- Input Capacitance (Ciss) (Max) @ Vds :
- 5890pF @ 25V
- Additional Feature :
- AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
- Drain to Source Voltage (Vdss) :
- 30V
- Rds On (Max) @ Id, Vgs :
- 8m Ω @ 14.9A, 10V
- DS Breakdown Voltage-Min :
- 30V
- Number of Elements :
- 1
- Radiation Hardening :
- No
- Series :
- OptiMOS™
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- Number of Terminations :
- 8
- Datasheets
- BSO301SPNTMA1

P-Channel Tape & Reel (TR) 8m Ω @ 14.9A, 10V ±20V 5890pF @ 25V 136nC @ 10V 30V 8-SOIC (0.154, 3.90mm Width)
BSO301SPNTMA1 Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 5890pF @ 25V.This device conducts a continuous drain current (ID) of 14.9A, which is the maximum continuous current transistor can conduct.When the device is turned off, a turn-off delay time of 130 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 60A.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 15 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.A normal operation of the DS requires keeping the breakdown voltage above 30V.This transistor requires a drain-source voltage (Vdss) of 30V.In order to reduce power consumption, this device uses a drive voltage of 4.5V 10V volts (4.5V 10V).
BSO301SPNTMA1 Features
a continuous drain current (ID) of 14.9A
the turn-off delay time is 130 ns
based on its rated peak drain current 60A.
a 30V drain to source voltage (Vdss)
BSO301SPNTMA1 Applications
There are a lot of Infineon Technologies
BSO301SPNTMA1 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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