BSO303SPH
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- Mfr.Part #
- BSO303SPH
- Manufacturer
- Infineon Technologies
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- 7.2A, 30V, 0.021OHM, P-CHANNEL,
- Stock
- 2,561
- In Stock ：
- 2,561
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mount :
- Surface Mount
- Vgs (Max) :
- ±20V
- Current - Continuous Drain (Id) @ 25°C :
- 7.2A Ta
- Terminal Position :
- Dual
- Drain to Source Voltage (Vdss) :
- 30V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Contact Plating :
- Tin
- Gate to Source Voltage (Vgs) :
- 20V
- Rds On (Max) @ Id, Vgs :
- 21m Ω @ 9.1A, 10V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Power Dissipation-Max :
- 1.56W Ta
- RoHS Status :
- ROHS3 Compliant
- Operating Temperature :
- -55°C~150°C TJ
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Series :
- OptiMOS™
- Pbfree Code :
- yes
- Vgs(th) (Max) @ Id :
- 2V @ 100µA
- Published :
- 2011
- Max Dual Supply Voltage :
- -30V
- Gate Charge (Qg) (Max) @ Vgs :
- 54nC @ 10V
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Continuous Drain Current (ID) :
- 7.2A
- Avalanche Energy Rating (Eas) :
- 97 mJ
- Transistor Element Material :
- SILICON
- Terminal Form :
- Gull wing
- Qualification Status :
- Not Qualified
- Operating Mode :
- ENHANCEMENT MODE
- Number of Terminations :
- 8
- Mounting Type :
- Surface Mount
- Pin Count :
- 8
- Halogen Free :
- Halogen Free
- Rise Time :
- 11ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 2330pF @ 25V
- Factory Lead Time :
- 17 Weeks
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Number of Elements :
- 1
- Pulsed Drain Current-Max (IDM) :
- 36A
- Power Dissipation :
- 1.56W
- FET Type :
- P-Channel
- Lead Free :
- Lead Free
- Packaging :
- Tape and Reel (TR)
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- ECCN Code :
- EAR99
- Additional Feature :
- LOGIC LEVEL COMPATIBLE
- Number of Pins :
- 8
- Datasheets
- BSO303SPH
P-Channel Tape & Reel (TR) 21m Ω @ 9.1A, 10V ±20V 2330pF @ 25V 54nC @ 10V 30V 8-SOIC (0.154, 3.90mm Width)
BSO303SPHXUMA1 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 97 mJ.A device's maximum input capacitance is 2330pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 7.2A for this device. Drain current refers to the capacity of the device to conduct continuous current.Its maximum pulsed drain current is 36A, which is also its maximum rating peak drainage current.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.Powered by -30V, it supports maximum dual supply voltages.To operate this transistor, you need to apply a 30V drain to source voltage (Vdss).This device uses no drive voltage (4.5V 10V) to reduce its overall power consumption.
BSO303SPHXUMA1 Features
the avalanche energy rating (Eas) is 97 mJ
a continuous drain current (ID) of 7.2A
based on its rated peak drain current 36A.
a 30V drain to source voltage (Vdss)
BSO303SPHXUMA1 Applications
There are a lot of Infineon Technologies
BSO303SPHXUMA1 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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