BSM75GB170DN2HOSA1

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Mfr.Part #
BSM75GB170DN2HOSA1
Manufacturer
Infineon Technologies
Package / Case
Module
Datasheet
Download
Description
IGBT MOD 1700V 110A 625W
Stock
1
In Stock :
1

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - IGBTs - Modules
Lead Free :
Lead Free
Input Capacitance :
11nF
Case Connection :
Isolated
Published :
1999
Transistor Element Material :
SILICON
Input Capacitance (Cies) @ Vce :
11nF @ 25V
Voltage - Collector Emitter Breakdown (Max) :
1700V
RoHS Status :
RoHS Compliant
Number of Elements :
2
Collector Emitter Breakdown Voltage :
1.7kV
Mount :
Chassis Mount, Screw
Pbfree Code :
No
Collector Emitter Voltage (VCEO) :
3.9V
Element Configuration :
Dual
Max Collector Current :
110A
Max Power Dissipation :
625W
Vce(on) (Max) @ Vge, Ic :
3.9V @ 15V, 75A
Mounting Type :
Chassis Mount
Operating Temperature :
150°C TJ
Terminal Form :
UNSPECIFIED
Transistor Application :
POWER CONTROL
Input :
Standard
Pin Count :
7
NTC Thermistor :
No
Polarity/Channel Type :
N-Channel
Turn Off Time-Nom (toff) :
740 ns
Package / Case :
Module
JESD-30 Code :
R-XUFM-X7
ECCN Code :
EAR99
Halogen Free :
Not Halogen Free
Power - Max :
625W
Number of Pins :
34
Number of Terminations :
7
Turn On Time :
550 ns
Configuration :
Half Bridge
Terminal Position :
UPPER
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Introducing Transistors - IGBTs - Modules Infineon Technologies BSM75GB170DN2HOSA1 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Chassis Mount, Operating Temperature:150°C TJ, Package / Case:Module, Number of Pins:34, Number of Terminations:7, BSM75GB170DN2HOSA1 pinout, BSM75GB170DN2HOSA1 datasheet PDF, BSM75GB170DN2HOSA1 amp .Beyond Transistors - IGBTs - Modules Infineon Technologies BSM75GB170DN2HOSA1 ,we also offer FS450R12KE3BOSA1, VS-GT80DA120U, FD450R12KE4PHOSA1, Our vast inventory has you covered. Contact us now for immediate solutions.



BSM75GB170DN2HOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available at

BSM75GB170DN2HOSA1 Description


BSM75GB170DN2HOSA1 developed by Infineon Technologies is a type of  IGBT module which is a modular semiconductor product which is packaged by IGBT (insulated gate bipolar transistor chip) and FWD (freewheeling diode chip) through a specific circuit bridge; the packaged IGBT module is directly used in frequency converters, UPS uninterrupted power supply and other equipment. It is characterized by energy saving, convenient installation and maintenance, and stable heat dissipation.



BSM75GB170DN2HOSA1 Features


Energy saving

Convenient installation

Convenient maintenance

Stable heat dissipation



BSM75GB170DN2HOSA1 Applications


Rail transit

Smart grid

Aerospace

Electric vehicles 

New energy equipment


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