BSM50GD120DN2G

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Modules

Input Capacitance (Cies) @ Vce :

33nF @ 25V

Collector Emitter Voltage (VCEO) :

1.2kV

Max Collector Current :

72A

Vce(on) (Max) @ Vge, Ic :

3.7V @ 15V, 50A

Case Connection :

Isolated

JESD-30 Code :

R-XUFM-T39

Mounting Type :

Chassis Mount

Number of Pins :

21

Terminal Position :

UPPER

ECCN Code :

EAR99

Polarity/Channel Type :

N-Channel

Transistor Element Material :

SILICON

Gate-Emitter Voltage-Max :

20V

Voltage - Collector Emitter Breakdown (Max) :

1200V

Pin Count :

39

Number of Elements :

6

Current - Collector (Ic) (Max) :

78A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

150°C TJ

Transistor Application :

POWER CONTROL

Number of Terminations :

39

Published :

2012

Power Dissipation :

400W

Mount :

Screw

NTC Thermistor :

No

Collector Emitter Saturation Voltage :

2.5V

Input :

Standard

RoHS Status :

RoHS Compliant

Configuration :

Full Bridge

Turn On Time :

100 ns

VCEsat-Max :

3.7 V

Terminal Form :

THROUGH-HOLE

Turn Off Time-Nom (toff) :

450 ns

Collector Emitter Breakdown Voltage :

1.2kV

Package / Case :

Module