BSM35GD120DN2

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Mfr.Part #
BSM35GD120DN2
Manufacturer
Infineon Technologies
Package / Case
Module
Datasheet
Download
Description
IGBT MOD 1200V 50A 280W
Stock
37,479
In Stock :
37,479

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - IGBTs - Modules
VCEsat-Max :
3.2 V
Factory Lead Time :
18 Weeks
IGBT Type :
NPT
Collector Emitter Saturation Voltage :
2.7V
Case Connection :
Isolated
Collector Emitter Breakdown Voltage :
1.2kV
Mounting Type :
Chassis Mount
Turn Off Time-Nom (toff) :
450 ns
Voltage - Collector Emitter Breakdown (Max) :
1200V
Pin Count :
17
Mount :
Screw
Height :
17mm
Turn On Time :
120 ns
Number of Terminations :
17
Gate-Emitter Voltage-Max :
20V
Width :
45.5mm
ECCN Code :
EAR99
Operating Temperature :
150°C TJ
Terminal Position :
UPPER
Configuration :
Three Phase Inverter
Number of Pins :
17
Power Dissipation :
280W
Package / Case :
Module
Input Capacitance (Cies) @ Vce :
2nF @ 25V
Collector Emitter Voltage (VCEO) :
1.2kV
Polarity/Channel Type :
N-Channel
Published :
1999
Transistor Element Material :
SILICON
NTC Thermistor :
No
Length :
107.5mm
Terminal Form :
UNSPECIFIED
Vce(on) (Max) @ Vge, Ic :
3.2V @ 15V, 35A
Input :
Standard
Max Power Dissipation :
280W
RoHS Status :
RoHS Compliant
Number of Elements :
6
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Max Collector Current :
50A
Datasheets
BSM35GD120DN2
Introducing Transistors - IGBTs - Modules Infineon Technologies BSM35GD120DN2 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Chassis Mount, Number of Terminations:17, Operating Temperature:150°C TJ, Number of Pins:17, Package / Case:Module, BSM35GD120DN2 pinout, BSM35GD120DN2 datasheet PDF, BSM35GD120DN2 amp .Beyond Transistors - IGBTs - Modules Infineon Technologies BSM35GD120DN2 ,we also offer FS450R12KE3BOSA1, VS-GT80DA120U, FD450R12KE4PHOSA1, Our vast inventory has you covered. Contact us now for immediate solutions.



BSM35GD120DN2 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available at

BSM35GD120DN2 Description

 

BSM35GD120DN2   IGBT is the power semiconductor die, which is the abbreviation of insulated gate bipolar transistor. IGBT power module is the assembly and physical packaging of several IGBT power semiconductor chips in one package.

 

 

BSM35GD120DN2  Features

 

? Power module

? 3-phase full-bridge

? Including fast free-wheel diodes

? Package with insulated metal base plate

 

BSM35GD120DN2 Applications


automotive traction inverters

energy storage systems

uninterruptible power supplies (UPS) 

motor drive applications


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