BSM30GP60B2BOSA1
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- Mfr.Part #
- BSM30GP60B2BOSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- Module
- Datasheet
- Download
- Description
- IGBT MODULE 600V 50A 180W
- Stock
- 49,462
- In Stock ：
- 49,462
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - IGBTs - Modules
- Operating Temperature :
- -40°C~125°C
- Voltage - Collector Emitter Breakdown (Max) :
- 600V
- Input Capacitance (Cies) @ Vce :
- 1.6nF @ 25V
- Current - Collector Cutoff (Max) :
- 500μA
- Package / Case :
- Module
- Current - Collector (Ic) (Max) :
- 50A
- Power - Max :
- 180W
- Input :
- Three Phase Bridge Rectifier
- Vce(on) (Max) @ Vge, Ic :
- 2.45V @ 15V, 30A
- Mounting Type :
- Chassis Mount
- NTC Thermistor :
- yes
- Configuration :
- Full Bridge
- Datasheets
- BSM30GP60B2BOSA1
BSM30GP60B2BOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available at
BSM30GP60B2BOSA1 Description
BSM30GP60B2BOSA1 is a 600v IGBT module. The BSM30GP60B2BOSA1 can be applied in Industrial, Grid infrastructure, Enterprise systems, Datacenter & enterprise computing, Personal electronics, and Tablet applications due to the following features. The Operating and Storage Temperature Range is between -40 and 125℃. And the transistor BSM30GP60B2BOSA1 is in the tray package with 180W Power dissipation.
BSM30GP60B2BOSA1 Features
Collector-emitter voltage Tvj = 25°C: 600v
Continuous DC collector current TC = 25°C : 50A
Repetitive peak collector current Tp = 1 ms: 60A
Total power dissipation Tc = 25°C: 180W
Gate-emitter peak voltage: ±20V
BSM30GP60B2BOSA1 Applications
Industrial
Grid infrastructure
Enterprise systems
Datacenter & enterprise computing
Personal electronics
Tablets
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