BSM30GD60DLCE3224
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- Mfr.Part #
- BSM30GD60DLCE3224
- Manufacturer
- Infineon Technologies
- Package / Case
- Module
- Datasheet
- Download
- Description
- IGBT MODULE 600V 40A 135W
- Stock
- 13,912
- In Stock ：
- 13,912
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - IGBTs - Modules
- Terminal Form :
- UNSPECIFIED
- Configuration :
- Single
- Turn Off Time-Nom (toff) :
- 103 ns
- Mounting Type :
- Chassis Mount
- Package / Case :
- Module
- Transistor Element Material :
- SILICON
- Current - Collector Cutoff (Max) :
- 500μA
- Input Capacitance (Cies) @ Vce :
- 1.3nF @ 25V
- Collector Emitter Voltage (VCEO) :
- 600V
- Input :
- Standard
- ECCN Code :
- EAR99
- Number of Pins :
- 17
- IGBT Type :
- NPT
- Number of Elements :
- 6
- RoHS Status :
- RoHS Compliant
- Published :
- 2000
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- NTC Thermistor :
- No
- Operating Temperature :
- 150°C TJ
- Pin Count :
- 17
- Collector Emitter Saturation Voltage :
- 1.95V
- Terminal Position :
- UPPER
- VCEsat-Max :
- 2.45 V
- Case Connection :
- Isolated
- Polarity/Channel Type :
- N-Channel
- Mount :
- Screw
- Number of Terminations :
- 17
- Max Collector Current :
- 40A
- Power Dissipation :
- 135W
- Gate-Emitter Voltage-Max :
- 20V
- Vce(on) (Max) @ Vge, Ic :
- 2.45V @ 15V, 30A
- Turn On Time :
- 39 ns
- Current - Collector (Ic) (Max) :
- 40A
- Datasheets
- BSM30GD60DLCE3224
BSM30GD60DLCE3224 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available at
BSM30GD60DLCE3224 Description
The BSM30GD60DLCE3224 is an Infineon Technologies IGBT module.
BSM30GD60DLCE3224 Features
-
Collector-emitter voltage VCES 600 V
-
DC-collector current TC = 25 °C IC 40 A
-
Collector current tP = 1 ms, TC = 70°C ICRM 60 A
-
Total power dissipation TC=25°C, Transistor Ptot 135 W
-
gate-emitter peak voltage VGES +/- 20V V
-
DC forward current IF 3
BSM30GD60DLCE3224 Applications
-
Industrial
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