BSM180C12P3C202
- Mfr.Part #
- BSM180C12P3C202
- Manufacturer
- ROHM Semiconductor
- Package / Case
- Module
- Datasheet
- Download
- Description
- SICFET N-CH 1200V 180A MODULE
- Stock
- 11
- In Stock :
- 11
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mounting :
- Screw
- Continuous Drain Current :
- 180(A)
- Rad Hardened :
- No
- Power Dissipation (Max) :
- 880W (Tc)
- Operating Temperature Classification :
- Automotive
- Mounting Type :
- Chassis Mount
- Packaging :
- Tray
- Channel Mode :
- Enhancement
- Rds On (Max) @ Id, Vgs :
- -
- Supplier Device Package :
- Module
- Product :
- Power MOSFET Modules
- Series :
- -
- Maximum Operating Temperature :
- + 150 C
- Subcategory :
- Discrete Semiconductor Modules
- Rise Time :
- 45 ns
- Product Status :
- Active
- Reach Compliance Code :
- Compliant
- Minimum Operating Temperature :
- - 40 C
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Mounting Style :
- Screw Mounts
- Package / Case :
- Module
- Polarity :
- N
- Channel Type :
- N
- Vgs(th) (Max) @ Id :
- 5.6V @ 50mA
- Gate-Source Voltage (Max) :
- 22(V)
- FET Feature :
- -
- Pin Count :
- 10
- Factory Lead Time :
- 17 Weeks
- Operating Temp Range :
- -40C to 150C
- Base Product Number :
- BSM180
- Power Dissipation :
- 880
- Brand :
- Rohm Semiconductor
- Drain to Source Voltage (Vdss) :
- 1200 V
- Package :
- Bulk
- Input Capacitance (Ciss) (Max) @ Vds :
- 9000 pF @ 10 V
- Vgs (Max) :
- +22V, -4V
- Operating Supply Voltage :
- -
- Vf - Forward Voltage :
- 1.6 V
- Product Type :
- Discrete Semiconductor Modules
- Transistor Polarity :
- N-Channel
- Continuous Drain Current Id :
- 180
- Product Category :
- Discrete Semiconductor Modules
- Number of Elements :
- 1
- Drive Voltage (Max Rds On, Min Rds On) :
- -
- Current - Continuous Drain (Id) @ 25°C :
- 180A (Tc)
- FET Type :
- N-Channel
- Drain-Source On-Volt :
- 1200(V)
- Manufacturer :
- Rohm Semiconductor
- Operating Temperature :
- -40°C ~ 150°C (TJ)
- Type :
- Power MOSFET
- RoHS :
- Details
- Datasheets
- BSM180C12P3C202
N-Channel Tray - +22V, -4V 9000 pF @ 10 V 1200 V Module
BSM180C12P3C202 Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 9000 pF @ 10 V.The transistor must receive a 1200 V drain to source voltage (Vdss) in order to function.
BSM180C12P3C202 Features
a 1200 V drain to source voltage (Vdss)
BSM180C12P3C202 Applications
There are a lot of Rohm Semiconductor
BSM180C12P3C202 applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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