BLF4G20LS-130,112

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - RF

Published :

2007

Terminal Form :

Flat

Operating Mode :

ENHANCEMENT MODE

Drain Current-Max (Abs) (ID) :

15A

Terminal Position :

Dual

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Package / Case :

SOT-502B

Number of Terminations :

3

Packaging :

Tray

Power - Output :

130W

Transistor Element Material :

SILICON

Voltage - Rated :

65V

DS Breakdown Voltage-Min :

65V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Voltage - Test :

28V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Configuration :

Single

Surface Mount :

yes

Transistor Type :

LDMOS

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Operating Temperature (Max) :

150°C

Case Connection :

SOURCE

RoHS Status :

ROHS3 Compliant

Gain :

14.6dB

ECCN Code :

EAR99

Qualification Status :

Not Qualified

JESD-30 Code :

R-CDFP-F3

Polarity/Channel Type :

N-Channel

Transistor Application :

AMPLIFIER

Current - Test :

900mA

Base Part Number :

BLF4G20

Number of Elements :

1

Pin Count :

3

Frequency :

1.93GHz~1.99GHz

Current Rating (Amps) :

15A