BLF4G20LS-110B,112

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - RF

Power - Output :

100W

Voltage - Rated :

65V

Voltage - Test :

28V

Packaging :

Tray

Surface Mount :

yes

Operating Temperature (Max) :

150°C

Operating Mode :

ENHANCEMENT MODE

Base Part Number :

BLF4G20

Drain Current-Max (Abs) (ID) :

12A

Qualification Status :

Not Qualified

Published :

2005

Transistor Element Material :

SILICON

Number of Elements :

1

Case Connection :

SOURCE

Pin Count :

2

Current - Test :

650mA

Transistor Type :

LDMOS

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Transistor Application :

AMPLIFIER

Gain :

13.4dB

Package / Case :

SOT-502B

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current Rating (Amps) :

12A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Form :

Flat

Terminal Position :

Dual

JESD-30 Code :

R-CDFP-F2

Frequency :

1.93GHz~1.99GHz

Configuration :

Single

DS Breakdown Voltage-Min :

65V

Polarity/Channel Type :

N-Channel

Number of Terminations :

2