BLF4G22LS-130,112

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - RF

Packaging :

Tray

Drain Current-Max (Abs) (ID) :

15A

RoHS Status :

ROHS3 Compliant

Package / Case :

SOT-502B

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature (Max) :

200°C

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Frequency :

2.11GHz~2.17GHz

Transistor Application :

AMPLIFIER

Number of Elements :

1

Voltage - Test :

28V

Qualification Status :

Not Qualified

Case Connection :

SOURCE

Gain :

13.5dB

Voltage - Rated :

65V

Terminal Form :

Flat

Transistor Element Material :

SILICON

Surface Mount :

yes

Polarity/Channel Type :

N-Channel

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Current - Test :

1.15A

Power - Output :

33W

DS Breakdown Voltage-Min :

65V

Published :

2007

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pin Count :

2

ECCN Code :

EAR99

Configuration :

Single

Current Rating (Amps) :

15A

Transistor Type :

LDMOS

Number of Terminations :

2

JESD-30 Code :

R-CDFP-F2

Operating Mode :

ENHANCEMENT MODE

Terminal Position :

Dual