BFN19E6327HTSA1
- Mfr.Part #
- BFN19E6327HTSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS PNP 300V 0.2A SOT89
- Stock
- 36,569
- In Stock :
- 36,569
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Reach Compliance Code :
- Compliant
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Collector Current-Max (IC) :
- 0.2 A
- ECCN Code :
- EAR99
- Package / Case :
- TO-243AA
- JESD-30 Code :
- R-PSSO-F3
- Factory Lead Time :
- 1 Week
- Case Connection :
- COLLECTOR
- Power - Max :
- 1 W
- Current - Collector Cutoff (Max) :
- 100nA (ICBO)
- Voltage - Collector Emitter Breakdown (Max) :
- 300 V
- Qualification Status :
- Not Qualified
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 2mA, 20mA
- Number of Elements :
- 1
- Supplier Device Package :
- PG-SOT89
- Surface Mount :
- yes
- Configuration :
- Single
- Terminal Form :
- Flat
- Collector-Emitter Voltage-Max :
- 300 V
- DC Current Gain-Min (hFE) :
- 30
- Package Shape :
- RECTANGULAR
- Transistor Application :
- SWITCHING
- Terminal Position :
- Single
- Product Status :
- Active
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 10mA, 10V
- Series :
- -
- Frequency - Transition :
- 100MHz
- Polarity/Channel Type :
- PNP
- Transistor Type :
- PNP
- Package :
- Bulk
- Current - Collector (Ic) (Max) :
- 200 mA
- Transistor Element Material :
- SILICON
- Operating Temperature :
- 150°C (TJ)
- Mounting Type :
- Surface Mount
- Manufacturer :
- Infineon Technologies AG
- Pbfree Code :
- yes
- Number of Terminals :
- 3
- Datasheets
- BFN19E6327HTSA1

PNP 150°C (TJ) 100nA (ICBO) 1 Elements SILICON PNP TO-243AA Surface Mount
BFN19E6327HTSA1 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 40 @ 10mA, 10V.When VCE saturation is 500mV @ 2mA, 20mA, transistor means Ic has reached transistors maximum value (saturated).Supplier package PG-SOT89 contains the product.Voltage maximal between collector and emitter is set to 300 V.The device has a 300 V maximal voltage - Collector Emitter Breakdown.
BFN19E6327HTSA1 Features
the DC current gain for this device is 40 @ 10mA, 10V
the vce saturation(Max) is 500mV @ 2mA, 20mA
the supplier device package of PG-SOT89
BFN19E6327HTSA1 Applications
There are a lot of Infineon Technologies
BFN19E6327HTSA1 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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| BFN18E6327HTSA1 | Infineon Technologies | 38,363 | TRANS NPN 300V 0.2A SOT89 |
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