BFN18E6327HTSA1
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- Mfr.Part #
- BFN18E6327HTSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS NPN 300V 0.2A SOT89
- Stock
- 38,363
- In Stock ：
- 38,363
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Published :
- 2010
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 2mA, 20mA
- Mounting Type :
- Surface Mount
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Transistor Element Material :
- SILICON
- Power - Max :
- 1W
- Terminal Position :
- Single
- ECCN Code :
- EAR99
- Surface Mount :
- yes
- Case Connection :
- COLLECTOR
- Package / Case :
- TO-243AA
- Transistor Type :
- NPN
- Pbfree Code :
- yes
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 30mA 10V
- Terminal Form :
- Flat
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- JESD-30 Code :
- R-PSSO-F3
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Packaging :
- Tape and Reel (TR)
- Configuration :
- Single
- Voltage - Collector Emitter Breakdown (Max) :
- 300V
- Operating Temperature :
- 150°C TJ
- Reach Compliance Code :
- Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Application :
- SWITCHING
- Qualification Status :
- Not Qualified
- Transition Frequency :
- 70MHz
- Frequency - Transition :
- 70MHz
- Polarity/Channel Type :
- NPN
- Base Part Number :
- BFN18
- Current - Collector (Ic) (Max) :
- 200mA
- RoHS Status :
- RoHS Compliant
- Number of Elements :
- 1
- Number of Terminations :
- 3
- Datasheets
- BFN18E6327HTSA1
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-243AA Tape & Reel (TR) Surface Mount
BFN18E6327HTSA1 Overview
In this device, the DC current gain is 30 @ 30mA 10V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 2mA, 20mA.Single BJT transistor contains a transSingle BJT transistorion frequency of 70MHz.There is a 300V maximal voltage in the device due to collector-emitter breakdown.
BFN18E6327HTSA1 Features
the DC current gain for this device is 30 @ 30mA 10V
the vce saturation(Max) is 500mV @ 2mA, 20mA
a transition frequency of 70MHz
BFN18E6327HTSA1 Applications
There are a lot of Infineon Technologies
BFN18E6327HTSA1 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| BFN18H6327XTSA1 | Infineon Technologies | 6,453 | TRANS NPN 300V 0.2A SOT89 |
| BFN19E6327HTSA1 | Infineon Technologies | 36,569 | TRANS PNP 300V 0.2A SOT89 |
| BFN19H6327XTSA1 | Infineon Technologies | 44,736 | TRANS PNP 300V 0.2A SOT89 |
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