BFL4026-1E
- Mfr.Part #
- BFL4026-1E
- Manufacturer
- onsemi
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 900V 3.5A TO220F-3FS
- Stock
- 1,368
- In Stock :
- 1,368
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Gate Charge (Qg) (Max) @ Vgs :
- 33nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 650pF @ 30V
- Lead Free :
- Lead Free
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Vgs (Max) :
- ±30V
- Drain to Source Voltage (Vdss) :
- 900V
- Gate to Source Voltage (Vgs) :
- 30V
- RoHS Status :
- ROHS3 Compliant
- ECCN Code :
- EAR99
- Pin Count :
- 3
- Operating Temperature :
- -55°C~150°C TJ
- Terminal Finish :
- Tin (Sn)
- Number of Pins :
- 3
- FET Type :
- N-Channel
- Pulsed Drain Current-Max (IDM) :
- 10A
- Mounting Type :
- Through Hole
- Reach Compliance Code :
- not_compliant
- Current - Continuous Drain (Id) @ 25°C :
- 3.5A Tc
- Transistor Element Material :
- SILICON
- Rise Time :
- 37ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Continuous Drain Current (ID) :
- 3.5A
- Number of Terminations :
- 3
- DS Breakdown Voltage-Min :
- 900V
- Package / Case :
- TO-220-3 Full Pack
- Operating Mode :
- ENHANCEMENT MODE
- JEDEC-95 Code :
- TO-220AB
- Surface Mount :
- No
- Turn On Delay Time :
- 14 ns
- JESD-609 Code :
- e3
- Fall Time (Typ) :
- 39 ns
- Number of Elements :
- 1
- Rds On (Max) @ Id, Vgs :
- 3.6 Ω @ 2.5A, 10V
- Element Configuration :
- Single
- Packaging :
- Tube
- Published :
- 2012
- Factory Lead Time :
- 2 Weeks
- Pbfree Code :
- yes
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Turn-Off Delay Time :
- 117 ns
- Power Dissipation-Max :
- 2W Ta 35W Tc
- Case Connection :
- Isolated
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Datasheets
- BFL4026-1E
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N-Channel Tube 3.6 Ω @ 2.5A, 10V ±30V 650pF @ 30V 33nC @ 10V 900V TO-220-3 Full Pack
BFL4026-1E Overview
A device's maximum input capacitance is 650pF @ 30V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 3.5A for this device. Drain current refers to the capacity of the device to conduct continuous current.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 117 ns.Its maximum pulsed drain current is 10A, which is also its maximum rating peak drainage current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 14 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.For normal operation, maintain the DS breakdown voltage above 900V.To operate this transistor, you need to apply a 900V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
BFL4026-1E Features
a continuous drain current (ID) of 3.5A
the turn-off delay time is 117 ns
based on its rated peak drain current 10A.
a 900V drain to source voltage (Vdss)
BFL4026-1E Applications
There are a lot of ON Semiconductor
BFL4026-1E applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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