BFL4007

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

680m Ω @ 7A, 10V

DS Breakdown Voltage-Min :

600V

Terminal Finish :

Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)

Vgs (Max) :

±30V

Mounting Type :

Through Hole

Gate Charge (Qg) (Max) @ Vgs :

46nC @ 10V

Terminal Position :

Single

Current - Continuous Drain (Id) @ 25°C :

8.7A Ta

Gate to Source Voltage (Vgs) :

30V

Input Capacitance (Ciss) (Max) @ Vds :

1200pF @ 30V

Vgs(th) (Max) @ Id :

5V @ 1mA

Rise Time :

72ns

Avalanche Energy Rating (Eas) :

215 mJ

Turn On Delay Time :

27 ns

Package / Case :

TO-220-3 Full Pack

Operating Temperature :

-55°C~150°C TJ

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Elements :

1

Pin Count :

3

Pulsed Drain Current-Max (IDM) :

49A

Drain to Source Voltage (Vdss) :

600V

Number of Terminations :

3

Turn-Off Delay Time :

122 ns

Mount :

Through Hole

Published :

2013

Drain-source On Resistance-Max :

0.68Ohm

Continuous Drain Current (ID) :

8.7A

Power Dissipation-Max :

2W Ta 40W Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

HTS Code :

8541.29.00.95

Fall Time (Typ) :

48 ns

RoHS Status :

RoHS Compliant

JESD-30 Code :

R-PSFM-T3

FET Type :

N-Channel

Radiation Hardening :

No

Case Connection :

Isolated

Transistor Application :

SWITCHING

Packaging :

Bulk

JEDEC-95 Code :

TO-220AB