BFL4001-1E

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Mfr.Part #
BFL4001-1E
Manufacturer
onsemi
Package / Case
TO-220-3 Full Pack
Datasheet
Download
Description
MOSFET N-CH 900V 4.1A TO220-3 FP
Stock
7,743
In Stock :
7,743

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Gate to Source Voltage (Vgs) :
30V
Turn-Off Delay Time :
156 ns
Current - Continuous Drain (Id) @ 25°C :
4.1A Tc
Gate Charge (Qg) (Max) @ Vgs :
44nC @ 10V
ECCN Code :
EAR99
Drive Voltage (Max Rds On,Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
2.7 Ω @ 3.25A, 10V
Fall Time (Typ) :
52 ns
Continuous Drain Current (ID) :
4.1A
Power Dissipation-Max :
2W Ta 37W Tc
Vgs (Max) :
±30V
Turn On Delay Time :
19 ns
Mounting Type :
Through Hole
Factory Lead Time :
5 Weeks
Drain to Source Breakdown Voltage :
900V
Package / Case :
TO-220-3 Full Pack
Packaging :
Tube
Rise Time :
49ns
JESD-609 Code :
e3
Pin Count :
3
Pbfree Code :
yes
Lead Free :
Lead Free
Number of Pins :
3
Operating Temperature :
-55°C~150°C TJ
Published :
2013
RoHS Status :
RoHS Compliant
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Element Configuration :
Single
FET Type :
N-Channel
Input Capacitance (Ciss) (Max) @ Vds :
850pF @ 30V
Terminal Finish :
Tin (Sn)
Datasheets
BFL4001-1E
Introducing Transistors - FETs, MOSFETs - Single onsemi BFL4001-1E from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Package / Case:TO-220-3 Full Pack, Number of Pins:3, Operating Temperature:-55°C~150°C TJ, BFL4001-1E pinout, BFL4001-1E datasheet PDF, BFL4001-1E amp .Beyond Transistors - FETs, MOSFETs - Single onsemi BFL4001-1E ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi BFL4001-1E


N-Channel Tube 2.7 Ω @ 3.25A, 10V ±30V 850pF @ 30V 44nC @ 10V TO-220-3 Full Pack

BFL4001-1E Overview


Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 850pF @ 30V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 4.1A amps.In this device, the drain-source breakdown voltage is 900V and VGS=900V, so the drain-source breakdown voltage is 900V in this case.It is [156 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 19 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.A device like this reduces its overall power consumption when it uses drive voltage (10V).

BFL4001-1E Features


a continuous drain current (ID) of 4.1A
a drain-to-source breakdown voltage of 900V voltage
the turn-off delay time is 156 ns


BFL4001-1E Applications


There are a lot of ON Semiconductor
BFL4001-1E applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
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