BDC01DRL1G
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- Mfr.Part #
- BDC01DRL1G
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 Long Body (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 100V 0.5A TO92
- Stock
- 27,765
- In Stock ：
- 27,765
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Emitter Base Voltage (VEBO) :
- 5V
- Peak Reflow Temperature (Cel) :
- 260
- Power Dissipation :
- 1W
- Voltage - Rated DC :
- 100V
- Reach Compliance Code :
- Unknown
- JESD-609 Code :
- e1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pin Count :
- 3
- Max Power Dissipation :
- 1W
- Max Collector Current :
- 500mA
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Additional Feature :
- EUROPEAN PART NUMBER
- Collector Emitter Breakdown Voltage :
- 100V
- Element Configuration :
- Single
- Mount :
- Through Hole
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Package / Case :
- TO-226-3, TO-92-3 Long Body (Formed Leads)
- Collector Emitter Voltage (VCEO) :
- 100V
- Transistor Application :
- AMPLIFIER
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Collector Base Voltage (VCBO) :
- 100V
- Number of Elements :
- 1
- Current Rating :
- 500mA
- Operating Temperature :
- -55°C~150°C TJ
- Number of Terminations :
- 3
- Polarity/Channel Type :
- NPN
- Gain Bandwidth Product :
- 50MHz
- Pbfree Code :
- yes
- Packaging :
- Tape and Reel (TR)
- hFE Min :
- 40
- Collector Emitter Saturation Voltage :
- 700mV
- Qualification Status :
- Not Qualified
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 100mA 1V
- Mounting Type :
- Through Hole
- Transition Frequency :
- 50MHz
- Published :
- 2006
- Frequency :
- 50MHz
- Transistor Element Material :
- SILICON
- Lifecycle Status :
- OBSOLETE (Last Updated: 1 week ago)
- RoHS Status :
- RoHS Compliant
- ECCN Code :
- EAR99
- Lead Free :
- Lead Free
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 100mA, 1A
- Number of Pins :
- 3
- Transistor Type :
- NPN
- Terminal Position :
- BOTTOM
- Datasheets
- BDC01DRL1G
,TO-226_bentlead.jpg)
NPN -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 Long Body (Formed Leads) Tape & Reel (TR) Through Hole
BDC01DRL1G Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 40 @ 100mA 1V.With a collector emitter saturation voltage of 700mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 700mV @ 100mA, 1A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 500mA.A transition frequency of 50MHz is present in the part.Collector current can be as low as 500mA volts at its maximum.
BDC01DRL1G Features
the DC current gain for this device is 40 @ 100mA 1V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 500mA
a transition frequency of 50MHz
BDC01DRL1G Applications
There are a lot of ON Semiconductor
BDC01DRL1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| BDC01DRL1 | onsemi | 10,000 | TRANS NPN 100V 0.5A TO92 |
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