BDC01DRL1G
- Mfr.Part #
- BDC01DRL1G
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 Long Body (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 100V 0.5A TO92
- Stock
- 27,765
- In Stock :
- 27,765
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Saturation Voltage :
- 700mV
- Transistor Application :
- AMPLIFIER
- Transistor Type :
- NPN
- Additional Feature :
- EUROPEAN PART NUMBER
- Element Configuration :
- Single
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 100mA, 1A
- Pin Count :
- 3
- Qualification Status :
- Not Qualified
- Gain Bandwidth Product :
- 50MHz
- JESD-609 Code :
- e1
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 100mA 1V
- Number of Pins :
- 3
- Pbfree Code :
- yes
- Operating Temperature :
- -55°C~150°C TJ
- Collector Emitter Breakdown Voltage :
- 100V
- Number of Elements :
- 1
- Transistor Element Material :
- SILICON
- Frequency :
- 50MHz
- Emitter Base Voltage (VEBO) :
- 5V
- ECCN Code :
- EAR99
- Package / Case :
- TO-226-3, TO-92-3 Long Body (Formed Leads)
- Lifecycle Status :
- OBSOLETE (Last Updated: 1 week ago)
- Peak Reflow Temperature (Cel) :
- 260
- RoHS Status :
- RoHS Compliant
- Polarity/Channel Type :
- NPN
- Max Power Dissipation :
- 1W
- Terminal Position :
- BOTTOM
- Number of Terminations :
- 3
- Mount :
- Through Hole
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Power Dissipation :
- 1W
- Packaging :
- Tape and Reel (TR)
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Lead Free :
- Lead Free
- Collector Emitter Voltage (VCEO) :
- 100V
- Published :
- 2006
- Voltage - Rated DC :
- 100V
- Transition Frequency :
- 50MHz
- Current Rating :
- 500mA
- hFE Min :
- 40
- Reach Compliance Code :
- Unknown
- Mounting Type :
- Through Hole
- Max Collector Current :
- 500mA
- Collector Base Voltage (VCBO) :
- 100V
- Datasheets
- BDC01DRL1G
,TO-226_bentlead.jpg)
NPN -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 Long Body (Formed Leads) Tape & Reel (TR) Through Hole
BDC01DRL1G Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 40 @ 100mA 1V.With a collector emitter saturation voltage of 700mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 700mV @ 100mA, 1A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 500mA.A transition frequency of 50MHz is present in the part.Collector current can be as low as 500mA volts at its maximum.
BDC01DRL1G Features
the DC current gain for this device is 40 @ 100mA 1V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 500mA
a transition frequency of 50MHz
BDC01DRL1G Applications
There are a lot of ON Semiconductor
BDC01DRL1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| BDC01DRL1 | onsemi | 10,000 | TRANS NPN 100V 0.5A TO92 |
















