BDC01DRL1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Saturation Voltage :

700mV

Transistor Application :

AMPLIFIER

Transistor Type :

NPN

Additional Feature :

EUROPEAN PART NUMBER

Element Configuration :

Single

Vce Saturation (Max) @ Ib, Ic :

700mV @ 100mA, 1A

Pin Count :

3

Qualification Status :

Not Qualified

Gain Bandwidth Product :

50MHz

JESD-609 Code :

e1

DC Current Gain (hFE) (Min) @ Ic, Vce :

40 @ 100mA 1V

Number of Pins :

3

Pbfree Code :

yes

Operating Temperature :

-55°C~150°C TJ

Collector Emitter Breakdown Voltage :

100V

Number of Elements :

1

Transistor Element Material :

SILICON

Frequency :

50MHz

Emitter Base Voltage (VEBO) :

5V

ECCN Code :

EAR99

Package / Case :

TO-226-3, TO-92-3 Long Body (Formed Leads)

Lifecycle Status :

OBSOLETE (Last Updated: 1 week ago)

Peak Reflow Temperature (Cel) :

260

RoHS Status :

RoHS Compliant

Polarity/Channel Type :

NPN

Max Power Dissipation :

1W

Terminal Position :

BOTTOM

Number of Terminations :

3

Mount :

Through Hole

Current - Collector Cutoff (Max) :

100nA ICBO

Time@Peak Reflow Temperature-Max (s) :

40

Power Dissipation :

1W

Packaging :

Tape and Reel (TR)

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Lead Free :

Lead Free

Collector Emitter Voltage (VCEO) :

100V

Published :

2006

Voltage - Rated DC :

100V

Transition Frequency :

50MHz

Current Rating :

500mA

hFE Min :

40

Reach Compliance Code :

Unknown

Mounting Type :

Through Hole

Max Collector Current :

500mA

Collector Base Voltage (VCBO) :

100V