BDC01DRL1
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- Mfr.Part #
- BDC01DRL1
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 Long Body (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 100V 0.5A TO92
- Stock
- 10,000
- In Stock ：
- 10,000
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Emitter Base Voltage (VEBO) :
- 5V
- Number of Pins :
- 3
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Published :
- 2006
- Mount :
- Through Hole
- Max Collector Current :
- 500mA
- Operating Temperature :
- -55°C~150°C TJ
- Polarity/Channel Type :
- NPN
- Collector Emitter Saturation Voltage :
- 700mV
- Number of Elements :
- 1
- hFE Min :
- 40
- Current Rating :
- 500mA
- Transition Frequency :
- 50MHz
- Pbfree Code :
- yes
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Package / Case :
- TO-226-3, TO-92-3 Long Body (Formed Leads)
- Peak Reflow Temperature (Cel) :
- 260
- Max Power Dissipation :
- 1W
- Voltage - Rated DC :
- 100V
- Collector Emitter Breakdown Voltage :
- 100V
- Frequency :
- 50MHz
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Power Dissipation :
- 1W
- Gain Bandwidth Product :
- 50MHz
- Lead Free :
- Lead Free
- Number of Terminations :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Element Configuration :
- Single
- Transistor Application :
- AMPLIFIER
- Collector Base Voltage (VCBO) :
- 100V
- Lifecycle Status :
- OBSOLETE (Last Updated: 1 week ago)
- Pin Count :
- 3
- RoHS Status :
- RoHS Compliant
- Collector Emitter Voltage (VCEO) :
- 100V
- JESD-609 Code :
- e1
- Terminal Position :
- BOTTOM
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 100mA 1V
- Mounting Type :
- Through Hole
- ECCN Code :
- EAR99
- Reach Compliance Code :
- Unknown
- Additional Feature :
- EUROPEAN PART NUMBER
- Transistor Type :
- NPN
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 100mA, 1A
- Packaging :
- Tape and Reel (TR)
- Transistor Element Material :
- SILICON
- Qualification Status :
- Not Qualified
- Datasheets
- BDC01DRL1
NPN -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 Long Body (Formed Leads) Tape & Reel (TR) Through Hole
BDC01DRL1G Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 40 @ 100mA 1V.With a collector emitter saturation voltage of 700mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 700mV @ 100mA, 1A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 500mA.A transition frequency of 50MHz is present in the part.Collector current can be as low as 500mA volts at its maximum.
BDC01DRL1G Features
the DC current gain for this device is 40 @ 100mA 1V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 500mA
a transition frequency of 50MHz
BDC01DRL1G Applications
There are a lot of ON Semiconductor
BDC01DRL1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| BDC01DRL1G | onsemi | 27,765 | TRANS NPN 100V 0.5A TO92 |
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