BD911

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - Bipolar (BJT) - Single

Operating Temperature :

150°C TJ

Pin Count :

3

RoHS Status :

ROHS3 Compliant

Weight :

90.718474g

JEDEC-95 Code :

TO-220AB

Radiation Hardening :

No

hFE Min :

15

Max Power Dissipation :

90W

Transistor Element Material :

SILICON

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Collector Base Voltage (VCBO) :

100V

Length :

10.4mm

Gain Bandwidth Product :

3MHz

Factory Lead Time :

8 Weeks

Collector Emitter Breakdown Voltage :

100V

Packaging :

Tube

Transition Frequency :

3MHz

Transistor Application :

SWITCHING

Vce Saturation (Max) @ Ib, Ic :

3V @ 2.5A, 10A

VCEsat-Max :

3 V

Element Configuration :

Single

Frequency :

3MHz

Base Part Number :

BD911

Package / Case :

TO-220-3

JESD-609 Code :

e3

Mount :

Through Hole

Emitter Base Voltage (VEBO) :

5V

Max Collector Current :

15A

Transistor Type :

NPN

Contact Plating :

Tin

Current Rating :

15A

REACH SVHC :

No SVHC

Current - Collector Cutoff (Max) :

1mA

Voltage - Rated DC :

100V

Number of Elements :

1

Number of Pins :

3

Width :

4.6mm

Lead Free :

Lead Free

Collector Emitter Saturation Voltage :

1V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Voltage (VCEO) :

100V

ECCN Code :

EAR99

Number of Terminations :

3

Polarity/Channel Type :

NPN

Mounting Type :

Through Hole

DC Current Gain (hFE) (Min) @ Ic, Vce :

15 @ 5A 4V

Height :

9.15mm

Power Dissipation :

90W