BD910
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- Mfr.Part #
- BD910
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS PNP 80V 15A TO220
- Stock
- 15,897
- In Stock ：
- 15,897
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Elements :
- 1
- Collector Base Voltage (VCBO) :
- 80V
- Transistor Application :
- SWITCHING
- Transistor Element Material :
- SILICON
- Package / Case :
- TO-220-3
- REACH SVHC :
- No SVHC
- Emitter Base Voltage (VEBO) :
- 5V
- Collector Emitter Breakdown Voltage :
- 80V
- Collector Emitter Voltage (VCEO) :
- 80V
- RoHS Status :
- ROHS3 Compliant
- Pin Count :
- 3
- Transition Frequency :
- 3MHz
- Max Collector Current :
- 15A
- Number of Terminations :
- 3
- Gain Bandwidth Product :
- 3MHz
- Frequency :
- 3MHz
- Transistor Type :
- PNP
- Polarity/Channel Type :
- PNP
- Operating Temperature :
- 150°C TJ
- Element Configuration :
- Single
- Base Part Number :
- BD910
- Max Power Dissipation :
- 90W
- Terminal Finish :
- Matte Tin (Sn)
- Current - Collector Cutoff (Max) :
- 1mA
- Mount :
- Through Hole
- Mounting Type :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pbfree Code :
- yes
- JEDEC-95 Code :
- TO-220AB
- JESD-609 Code :
- e3
- hFE Min :
- 40
- Power Dissipation :
- 90W
- VCEsat-Max :
- 3 V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 15 @ 5A 4V
- Collector Emitter Saturation Voltage :
- 1V
- Number of Pins :
- 3
- ECCN Code :
- EAR99
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 2.5A, 10A
- Radiation Hardening :
- No
- Packaging :
- Tube
- Datasheets
- BD910
PNP 150°C TJ 1mA 1 Elements 3 Terminations SILICON PNP TO-220-3 Tube Through Hole
BD910 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 15 @ 5A 4V.With a collector emitter saturation voltage of 1V, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 3V @ 2.5A, 10A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.A transition frequency of 3MHz is present in the part.Collector current can be as low as 15A volts at its maximum.
BD910 Features
the DC current gain for this device is 15 @ 5A 4V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 3V @ 2.5A, 10A
the emitter base voltage is kept at 5V
a transition frequency of 3MHz
BD910 Applications
There are a lot of STMicroelectronics
BD910 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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