BD809G
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- Mfr.Part #
- BD809G
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN 80V 10A TO220
- Stock
- 400
- In Stock ：
- 400
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Radiation Hardening :
- No
- Transistor Element Material :
- SILICON
- Package / Case :
- TO-220-3
- Max Collector Current :
- 10A
- Emitter Base Voltage (VEBO) :
- 5V
- Lead Free :
- Lead Free
- Number of Terminations :
- 3
- Surface Mount :
- No
- Peak Reflow Temperature (Cel) :
- 260
- Pbfree Code :
- yes
- JEDEC-95 Code :
- TO-220AB
- Width :
- 4.82mm
- Polarity/Channel Type :
- NPN
- Number of Elements :
- 1
- Pin Count :
- 3
- Current Rating :
- 10A
- Contact Plating :
- Tin
- Transition Frequency :
- 1.5MHz
- REACH SVHC :
- No SVHC
- Frequency :
- 1.5MHz
- Max Breakdown Voltage :
- 80V
- ECCN Code :
- EAR99
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Vce Saturation (Max) @ Ib, Ic :
- 1.1V @ 300mA, 3A
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Application :
- AMPLIFIER
- RoHS Status :
- ROHS3 Compliant
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 15 @ 4A 2V
- Voltage - Rated DC :
- 80V
- Collector Emitter Breakdown Voltage :
- 80V
- Collector Base Voltage (VCBO) :
- 80V
- Height :
- 15.75mm
- Collector Emitter Voltage (VCEO) :
- 80V
- Transistor Type :
- NPN
- Collector Emitter Saturation Voltage :
- 1.1V
- Factory Lead Time :
- 2 Weeks
- Case Connection :
- COLLECTOR
- Gain Bandwidth Product :
- 1.5MHz
- Current - Collector Cutoff (Max) :
- 1mA ICBO
- JESD-609 Code :
- e3
- Length :
- 10.28mm
- Weight :
- 4.535924g
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Published :
- 2007
- hFE Min :
- 30
- Max Power Dissipation :
- 90W
- Packaging :
- Tube
- Power Dissipation :
- 90W
- Mounting Type :
- Through Hole
- Number of Pins :
- 3
- Element Configuration :
- Single
- Datasheets
- BD809G
NPN -55°C~150°C TJ 1mA ICBO 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole
BD809G Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 15 @ 4A 2V.With a collector emitter saturation voltage of 1.1V, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1.1V @ 300mA, 3A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 10A.A transition frequency of 1.5MHz is present in the part.There is a breakdown input voltage of 80V volts that it can take.Collector current can be as low as 10A volts at its maximum.
BD809G Features
the DC current gain for this device is 15 @ 4A 2V
a collector emitter saturation voltage of 1.1V
the vce saturation(Max) is 1.1V @ 300mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is 10A
a transition frequency of 1.5MHz
BD809G Applications
There are a lot of ON Semiconductor
BD809G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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