BD809
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- Mfr.Part #
- BD809
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN 80V 10A TO220
- Stock
- 36,709
- In Stock ：
- 36,709
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- RoHS Status :
- ROHS3 Compliant
- Voltage - Rated DC :
- 80V
- Emitter Base Voltage (VEBO) :
- 5V
- Transistor Application :
- AMPLIFIER
- Element Configuration :
- Single
- Collector Emitter Saturation Voltage :
- 1.1V
- Number of Pins :
- 3
- Mounting Type :
- Through Hole
- Length :
- 10.28mm
- Time@Peak Reflow Temperature-Max (s) :
- 40
- JESD-609 Code :
- e3
- Transistor Element Material :
- SILICON
- JEDEC-95 Code :
- TO-220AB
- ECCN Code :
- EAR99
- Number of Terminations :
- 3
- Collector Base Voltage (VCBO) :
- 80V
- Published :
- 2007
- Max Collector Current :
- 10A
- Packaging :
- Tube
- Transistor Type :
- NPN
- Operating Temperature :
- -55°C~150°C TJ
- Radiation Hardening :
- No
- Lead Free :
- Lead Free
- Pbfree Code :
- yes
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Height :
- 15.75mm
- Surface Mount :
- No
- Package / Case :
- TO-220-3
- Collector Emitter Voltage (VCEO) :
- 80V
- Power Dissipation :
- 90W
- Max Power Dissipation :
- 90W
- REACH SVHC :
- No SVHC
- Peak Reflow Temperature (Cel) :
- 260
- Contact Plating :
- Tin
- Case Connection :
- COLLECTOR
- Number of Elements :
- 1
- Factory Lead Time :
- 2 Weeks
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current Rating :
- 10A
- Pin Count :
- 3
- Max Breakdown Voltage :
- 80V
- Transition Frequency :
- 1.5MHz
- Gain Bandwidth Product :
- 1.5MHz
- Weight :
- 4.535924g
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 15 @ 4A 2V
- Width :
- 4.82mm
- Collector Emitter Breakdown Voltage :
- 80V
- Vce Saturation (Max) @ Ib, Ic :
- 1.1V @ 300mA, 3A
- hFE Min :
- 30
- Current - Collector Cutoff (Max) :
- 1mA ICBO
- Frequency :
- 1.5MHz
- Polarity/Channel Type :
- NPN
- Datasheets
- BD809
NPN -55°C~150°C TJ 1mA ICBO 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole
BD809G Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 15 @ 4A 2V.With a collector emitter saturation voltage of 1.1V, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1.1V @ 300mA, 3A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 10A.A transition frequency of 1.5MHz is present in the part.There is a breakdown input voltage of 80V volts that it can take.Collector current can be as low as 10A volts at its maximum.
BD809G Features
the DC current gain for this device is 15 @ 4A 2V
a collector emitter saturation voltage of 1.1V
the vce saturation(Max) is 1.1V @ 300mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is 10A
a transition frequency of 1.5MHz
BD809G Applications
There are a lot of ON Semiconductor
BD809G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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