BD788G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Surface Mount :

No

Vce Saturation (Max) @ Ib, Ic :

2.5V @ 800mA, 4A

Collector Base Voltage (VCBO) :

80V

Factory Lead Time :

2 Weeks

REACH SVHC :

No SVHC

Radiation Hardening :

No

ECCN Code :

EAR99

Max Collector Current :

4A

Transistor Element Material :

SILICON

Max Power Dissipation :

15W

Emitter Base Voltage (VEBO) :

6V

Operating Temperature :

-65°C~150°C TJ

Transistor Type :

PNP

Number of Terminations :

3

Weight :

4.535924g

Current Rating :

-4A

Frequency :

50MHz

Collector Emitter Voltage (VCEO) :

60V

Peak Reflow Temperature (Cel) :

260

Collector Emitter Breakdown Voltage :

60V

Power Dissipation :

15W

Pin Count :

3

Voltage - Rated DC :

-60V

Number of Pins :

3

DC Current Gain (hFE) (Min) @ Ic, Vce :

40 @ 200mA 3V

Transition Frequency :

50MHz

Height :

6.35mm

Packaging :

Bulk

hFE Min :

40

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Mounting Type :

Through Hole

Width :

6.35mm

Element Configuration :

Single

Length :

6.35mm

Time@Peak Reflow Temperature-Max (s) :

40

Contact Plating :

Tin

Polarity/Channel Type :

PNP

Transistor Application :

SWITCHING

Gain Bandwidth Product :

50MHz

Lead Free :

Lead Free

Published :

2000

Number of Elements :

1

JESD-609 Code :

e3

Current - Collector Cutoff (Max) :

100μA

Pbfree Code :

yes

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-225AA, TO-126-3