BD788
- Mfr.Part #
- BD788
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS PNP 60V 4A TO126
- Stock
- 15,550
- In Stock :
- 15,550
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- RoHS Status :
- ROHS3 Compliant
- Voltage - Rated DC :
- -60V
- Frequency :
- 50MHz
- Element Configuration :
- Single
- Pbfree Code :
- yes
- Height :
- 6.35mm
- Surface Mount :
- No
- Published :
- 2000
- REACH SVHC :
- No SVHC
- Pin Count :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Current - Collector Cutoff (Max) :
- 100μA
- Weight :
- 4.535924g
- Factory Lead Time :
- 2 Weeks
- Max Collector Current :
- 4A
- Transition Frequency :
- 50MHz
- Contact Plating :
- Tin
- Packaging :
- Bulk
- hFE Min :
- 40
- Number of Terminations :
- 3
- Width :
- 6.35mm
- ECCN Code :
- EAR99
- Collector Base Voltage (VCBO) :
- 80V
- Operating Temperature :
- -65°C~150°C TJ
- Lead Free :
- Lead Free
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 200mA 3V
- JESD-609 Code :
- e3
- Max Power Dissipation :
- 15W
- Length :
- 6.35mm
- Mounting Type :
- Through Hole
- Vce Saturation (Max) @ Ib, Ic :
- 2.5V @ 800mA, 4A
- Peak Reflow Temperature (Cel) :
- 260
- Collector Emitter Voltage (VCEO) :
- 60V
- Radiation Hardening :
- No
- Polarity/Channel Type :
- PNP
- Package / Case :
- TO-225AA, TO-126-3
- Power Dissipation :
- 15W
- Number of Elements :
- 1
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- Transistor Type :
- PNP
- Emitter Base Voltage (VEBO) :
- 6V
- Current Rating :
- -4A
- Transistor Application :
- SWITCHING
- Gain Bandwidth Product :
- 50MHz
- Number of Pins :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Breakdown Voltage :
- 60V
- Transistor Element Material :
- SILICON
- Datasheets
- BD788
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PNP -65°C~150°C TJ 100μA 1 Elements 3 Terminations SILICON PNP TO-225AA, TO-126-3 Bulk Through Hole
BD788G Overview
In this device, the DC current gain is 40 @ 200mA 3V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 2.5V @ 800mA, 4A.Keeping the emitter base voltage at 6V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-4A).50MHz is present in the transition frequency.Maximum collector currents can be below 4A volts.
BD788G Features
the DC current gain for this device is 40 @ 200mA 3V
the vce saturation(Max) is 2.5V @ 800mA, 4A
the emitter base voltage is kept at 6V
the current rating of this device is -4A
a transition frequency of 50MHz
BD788G Applications
There are a lot of ON Semiconductor
BD788G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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