BD439S
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- Mfr.Part #
- BD439S
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN 60V 4A TO126-3
- Stock
- 36,216
- In Stock ：
- 36,216
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Weight :
- 761mg
- Transistor Element Material :
- SILICON
- Current Rating :
- 4A
- Vce Saturation (Max) @ Ib, Ic :
- 800mV @ 200mA, 2A
- Contact Plating :
- Tin
- Max Power Dissipation :
- 36W
- Operating Temperature :
- 150°C TJ
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 2 days ago)
- Collector Base Voltage (VCBO) :
- 60V
- Collector Emitter Breakdown Voltage :
- 60V
- Published :
- 2001
- Current - Collector Cutoff (Max) :
- 100μA ICBO
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lead Free :
- Lead Free
- Gain Bandwidth Product :
- 3MHz
- Number of Terminations :
- 3
- Frequency :
- 3MHz
- Mounting Type :
- Through Hole
- Packaging :
- Bulk
- Collector Emitter Saturation Voltage :
- 800mV
- ECCN Code :
- EAR99
- Radiation Hardening :
- No
- Voltage - Rated DC :
- 60V
- hFE Min :
- 25
- Transistor Application :
- SWITCHING
- Transistor Type :
- NPN
- Number of Pins :
- 3
- Pbfree Code :
- yes
- JESD-609 Code :
- e3
- Emitter Base Voltage (VEBO) :
- 5V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20 @ 10mA 5V
- Power Dissipation :
- 36W
- Max Collector Current :
- 4A
- Collector Emitter Voltage (VCEO) :
- 60V
- Polarity/Channel Type :
- NPN
- Transition Frequency :
- 3MHz
- Element Configuration :
- Single
- RoHS Status :
- ROHS3 Compliant
- Factory Lead Time :
- 11 Weeks
- Package / Case :
- TO-225AA, TO-126-3
- Base Part Number :
- BD439
- Number of Elements :
- 1
- Mount :
- Through Hole
- Datasheets
- BD439S
NPN 150°C TJ 100μA ICBO 1 Elements 3 Terminations SILICON NPN TO-225AA, TO-126-3 Bulk Through Hole
BD439S Overview
DC current gain in this device equals 20 @ 10mA 5V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 800mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 800mV @ 200mA, 2A.An emitter's base voltage can be kept at 5V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 4A current rating.As a result, the part has a transition frequency of 3MHz.In extreme cases, the collector current can be as low as 4A volts.
BD439S Features
the DC current gain for this device is 20 @ 10mA 5V
a collector emitter saturation voltage of 800mV
the vce saturation(Max) is 800mV @ 200mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is 4A
a transition frequency of 3MHz
BD439S Applications
There are a lot of ON Semiconductor
BD439S applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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