BD433S
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- Mfr.Part #
- BD433S
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN 22V 4A TO126-3
- Stock
- 1,257
- In Stock ：
- 1,257
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Saturation Voltage :
- 200mV
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Factory Lead Time :
- 2 Weeks
- Power Dissipation :
- 36W
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 10mA 5V
- Frequency :
- 3MHz
- Number of Terminations :
- 3
- Emitter Base Voltage (VEBO) :
- 5V
- Voltage - Rated DC :
- 22V
- Max Collector Current :
- 4A
- Gain Bandwidth Product :
- 3MHz
- Packaging :
- Bulk
- Polarity/Channel Type :
- NPN
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 200mA, 2A
- Contact Plating :
- Tin
- Mounting Type :
- Through Hole
- Operating Temperature :
- 150°C TJ
- Transistor Type :
- NPN
- Element Configuration :
- Single
- JESD-30 Code :
- R-PSFM-T3
- Current - Collector Cutoff (Max) :
- 100μA
- Published :
- 2017
- Lead Free :
- Lead Free
- Current Rating :
- 4A
- JESD-609 Code :
- e3
- Pbfree Code :
- yes
- ECCN Code :
- EAR99
- RoHS Status :
- ROHS3 Compliant
- Mount :
- Through Hole
- hFE Min :
- 50
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Transistor Application :
- SWITCHING
- Package / Case :
- TO-225AA, TO-126-3
- Collector Base Voltage (VCBO) :
- 22V
- Collector Emitter Voltage (VCEO) :
- 22V
- Qualification Status :
- Not Qualified
- Number of Elements :
- 1
- Transistor Element Material :
- SILICON
- Collector Emitter Breakdown Voltage :
- 22V
- Weight :
- 761mg
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transition Frequency :
- 3MHz
- Max Power Dissipation :
- 36W
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Datasheets
- BD433S
BD433S Documents
NPN 150°C TJ 100μA 1 Elements 3 Terminations SILICON NPN TO-225AA, TO-126-3 Bulk Through Hole
BD433S Overview
This device has a DC current gain of 40 @ 10mA 5V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 200mV allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 5V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 4A.In this part, there is a transition frequency of 3MHz.The maximum collector current is 4A volts.
BD433S Features
the DC current gain for this device is 40 @ 10mA 5V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 500mV @ 200mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is 4A
a transition frequency of 3MHz
BD433S Applications
There are a lot of ON Semiconductor
BD433S applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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