BD434S

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Mfr.Part #
BD434S
Manufacturer
onsemi
Package / Case
TO-225AA, TO-126-3
Datasheet
Download
Description
TRANS PNP 22V 4A TO126-3
Stock
1,718
In Stock :
1,718

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Collector Emitter Breakdown Voltage :
22V
Current Rating :
-4A
Lifecycle Status :
ACTIVE (Last Updated: 1 week ago)
Number of Terminations :
3
Max Collector Current :
4A
Contact Plating :
Tin
Qualification Status :
Not Qualified
Power Dissipation :
36W
Weight :
761mg
Emitter Base Voltage (VEBO) :
-5V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Mounting Type :
Through Hole
hFE Min :
50
Base Part Number :
BD434
Frequency :
3MHz
Element Configuration :
Single
Package / Case :
TO-225AA, TO-126-3
Transistor Element Material :
SILICON
Transistor Type :
PNP
Max Power Dissipation :
36W
Mount :
Through Hole
JESD-609 Code :
e3
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
RoHS Status :
ROHS3 Compliant
Published :
2001
Operating Temperature :
150°C TJ
Gain Bandwidth Product :
3MHz
Polarity/Channel Type :
PNP
Collector Emitter Saturation Voltage :
-200mV
ECCN Code :
EAR99
Factory Lead Time :
2 Weeks
Transition Frequency :
3MHz
Vce Saturation (Max) @ Ib, Ic :
500mV @ 200mA, 2A
Collector Emitter Voltage (VCEO) :
22V
Packaging :
Bulk
Pbfree Code :
yes
Lead Free :
Lead Free
Voltage - Rated DC :
-22V
JESD-30 Code :
R-PSFM-T3
Number of Elements :
1
Current - Collector Cutoff (Max) :
100μA
Collector Base Voltage (VCBO) :
-22V
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
DC Current Gain (hFE) (Min) @ Ic, Vce :
40 @ 10mA 5V
Transistor Application :
SWITCHING
Datasheets
BD434S
Introducing Transistors - Bipolar (BJT) - Single onsemi BD434S from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Mounting Type:Through Hole, Base Part Number:BD434, Package / Case:TO-225AA, TO-126-3, Operating Temperature:150°C TJ, BD434S pinout, BD434S datasheet PDF, BD434S amp .Beyond Transistors - Bipolar (BJT) - Single onsemi BD434S ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi BD434S


PNP 150°C TJ 100μA 1 Elements 3 Terminations SILICON PNP TO-225AA, TO-126-3 Bulk Through Hole

BD434S Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 40 @ 10mA 5V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of -200mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 200mA, 2A.The emitter base voltage can be kept at -5V for high efficiency.The current rating of this fuse is -4A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 3MHz.Single BJT transistor is possible to have a collector current as low as 4A volts at Single BJT transistors maximum.

BD434S Features


the DC current gain for this device is 40 @ 10mA 5V
a collector emitter saturation voltage of -200mV
the vce saturation(Max) is 500mV @ 200mA, 2A
the emitter base voltage is kept at -5V
the current rating of this device is -4A
a transition frequency of 3MHz


BD434S Applications


There are a lot of ON Semiconductor
BD434S applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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